Secondary electron emission from freely supported nanowires

Suzuki, Makoto; Kumagai, Kazuhiro; Sekiguchi, Takashi; Cassell, Alan M.; Saito, Tsutomu; Yang, Cary Y.

doi:10.1063/1.3032910

Cited by 19 publications

(7 citation statements)

References 32 publications

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“…In a process that involves electron-beam (EB) imaging, the scattering of electrons in materials associated with the imaging process determines the secondary electron emission coefficient (SEEC), 1,2 image resolution, 2,3 image contrast, 3,4 pattern profile, 5 and many other such image characteristics. Especially for a 3-D stack structure, the incident beam energy, varying from 0.1 to 30 keV, greatly influenced the electron imaging characteristics.…”

Section: Introductionmentioning

confidence: 99%

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Iida¹,

Amano²,

Hirano³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inQuantitative analysis of electron energy loss spectra and modelling of optical properties of multilayer systems for extreme ultraviolet radiation regime Impact of electron scattering in extreme ultraviolet reflective multilayer (ML) on electron image was investigated. The secondary electron emission coefficient of Ru capped ML was lower than that of Ru bulk layer when the incident electron energy was more than 0.5 keV. In ML, the backscattered electrons (BSEs) diffused laterally along the Si layer and escaped from the Ru surface, while generating secondary electrons. As a result, spatial intensity distribution of the emitted electrons within the ML sample was broader than that of the Ru bulk sample. The deep and broad undershot dip appeared in the profile of scanning electron microscope image for knife-edge pattern on ML sample. This was because the BSEs near the edge diffused laterally and were blocked from escaping from the sample surface by the absorber layer. In the case of hp 50 nm line-and-space (L/S) pattern, dips appeared only for Ru bulk samples, because the dense L/S pattern profile is essentially a summation of two opposing knife-edges. Simulated diffusion lengths were in good agreements with experimentally obtained dip widths. The influential range of laterally diffusion effect was from 3 to 20 keV.

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Section: Introductionmentioning

confidence: 99%

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Iida¹,

Amano²,

Hirano³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

View full text Add to dashboard Cite

show abstract

“…To study these observed phenomena quantitatively, we simulate the SE generation using the Monte Carlo method. In our previous studies, 29,30 we have developed Monte Carlo simulation codes to simulate the scattering process of PEs in the carbon specimen and the generation of SEs. In the codes, Mott cross-sections are implemented for elastic scattering and a continuously slowing-down approximation is assumed for averaged inelastic processes.…”

Section: Discussionmentioning

confidence: 99%

Conductive contact area estimation for carbon nanotube via interconnects using secondary-electron imaging

Abe

Suzuki

Vyas

et al. 2018

Journal of Applied Physics

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A major challenge for carbon nanotube (CNT) to become a viable replacement of copper and tungsten in the next-generation on-chip via interconnects is the high contact resistance between CNT and metal electrodes. A first step in meeting this challenge is an accurate characterization of via contact resistance. In this paper, the scanning electron microscope (SEM) image contrast at low landing energy is employed to estimate the conductive CNT area inside vias. The total conductive CNT area inside each via is deduced using SEM image with 0.1 keV landing energy and a specified threshold brightness, yielding via resistance versus CNT area behavior, which correlates well with electrical nanoprobing measurements of via resistance. Monte Carlo simulation of secondary electron generation lends further support for our analysis and suggests that the residue covering the CNT does not affect the conduction across the contact for residue thickness below 1 nm. This imaging and analysis technique can add much value to CNT via interconnect contact characterization.

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“…The SEs are the electrons emitted from material surface, including true secondary electrons (TSEs) and backscattering secondary electrons (BSEs). [9] Those TSEs are generated by inelastic scattering events between incident electrons and material extra-nuclear electrons, while elastic scattering events between incident electrons and material nuclei may result in BSEs. [10] Yield of SE due to electron irradiation can be calculated with both Monte Carlo (MC) numerical simulations and formulas directly.…”

Section: Introductionmentioning

confidence: 99%

A synthetic semi-empirical physical model of secondary electron yield of metals under E -beam irradiation

et al. 2017

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Calculations of secondary electron yield (SEY) by physical formula can hardly accord with experimental results precisely. Simplified descriptions of internal electron movements in the calculation and complex surface contamination states of real sample result in notable difference between simulations and experiments. In this paper, in order to calculate SEY of metal under complicated surface state accurately, we propose a synthetic semi-empirical physical model. The processes of excitation of internal secondary electron (SE) and movement toward surface can be simulated using this model. This model also takes into account the influences of incident angle and backscattering electrons as well as the surface gas contamination. In order to describe internal electronic states accurately, the penetration coefficient of incident electron is described as a function of material atom number. Directions of internal electrons are set to be uniform in each angle. The distribution of internal SEs is proposed by considering both the integration convergence and the cascade scattering process. In addition, according to the experiment data, relationship among desorption gas quantities, sample ultimate temperature and SEY is established. Comparing with experiment results, this synthetic semi-empirical physical model can describe the SEY of metal better than former formulas, especially in the aspect of surface contaminated states. The proposed synthetic semi-empirical physical model and presented results in this paper can be helpful for further studying SE emission, and offer an available method for estimating and taking advantage of SE emission accurately.

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Secondary electron emission from freely supported nanowires

Cited by 19 publications

References 32 publications

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Conductive contact area estimation for carbon nanotube via interconnects using secondary-electron imaging

A synthetic semi-empirical physical model of secondary electron yield of metals under E -beam irradiation

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