Segregation of boron in germanium crystal

Taishi, Toshinori; Murao, Yu; Ohno, Yutaka; Yonenaga, Ichiro

doi:10.1016/j.jcrysgro.2008.10.036

Cited by 10 publications

(7 citation statements)

References 13 publications

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“…In addition, there are also some other analytical methodologies, such as Atomic absorption spectrometry with graphite furnace (AASGF) with the limit of detection limit range between 10 -400 ppb [20], Spark source mass spectrometry (SSMS) with detection limit of sub ppm [60], X-ray fluorescence (XRF) with detection limit of 0.001% [61], and van der Pauw Hall effect measurement [18] [62]. The detailed comparison of these high purity analysis methods has been presented in Table 4.…”

Section: Trometry (Icp-ms/icp-oes)mentioning

confidence: 99%

Production of High Purity Metals: A Review on Zone Refining Process

Zhang¹,

Friedrich²,

Friedrich³

2018

JCPT

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Purification is a primary application of zone melting, in which the improvement of efficiency, production yield and minimum achievable impurity level are always the research focus due to the increasing demand for high purity metals. This paper has systematically outlined the whole development of related research on zone refining of metals including basic theories, variants of zone refining, parametric optimization, numerical models, and high purity analytical methods. The collection of this information could be of good value to improve the refining efficiency and the production of high purity metals by zone refining.

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Section: Trometry (Icp-ms/icp-oes)mentioning

confidence: 99%

Production of High Purity Metals: A Review on Zone Refining Process

Zhang¹,

Friedrich²,

Friedrich³

2018

JCPT

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“…In addition, previous studies [12] have shown that in the case of B-doped CZ-Ge crystal growth, when granular B had been added in the silica crucible along with the Ge raw materials, they could not be melted completely in the Ge melt. The unmelted B granules attached themselves to the seed at the beginning of the crystal growth, and the grown crystal became polycrystalline.…”

mentioning

confidence: 99%

“…18 cm −3 , and it decreased with increasing solidied fraction [12]. Then, an equilibrium segregation coecient of B in Ge of k 0 = 6.2 was estimated [13].…”

mentioning

confidence: 99%

Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

2013

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In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very dicult because of the segregation coecient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B2O3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.

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“…From such Ge melt partially covered with liquid B 2 O 3 we succeeded in growing four Ge single crystals. The grown-in dislocation density in the Ge crystals was investigated in comparison with that in a Ge crystal grown by a conventional technique [3]. The chemical and electrical properties of the Ge crystal were also evaluated.…”

mentioning

confidence: 99%

“…The chemical and electrical properties of the Ge crystal were also evaluated. Details of the crystal growth and characterization of Ge crystals grown by the conventional technique have been described elsewhere [3].…”

mentioning

confidence: 99%