Selected problems in IR and UV laser micromachining of Si and GaAs in submillimeter scale

Pawlak, Ryszard; Tomczyk, Mariusz; Walczak, Maria; Mizeraczyk, J.; Tański, M.; Garasz, K.

doi:10.1016/j.mee.2015.12.009

Cited by 10 publications

(4 citation statements)

References 9 publications

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“…In general, lapping [12], chemical polishing [13][14] or chemical mechanical polishing [15][16] are used to obtain planar GaAs substrates; however, these manufacturing processes are extremely time-consuming. Electrochemical wet stamping and laser micromachining [17][18][19] have been used to fabricate microstructures on GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

Chen

Ding

Luo

et al. 2020

Precision Engineering

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Gallium arsenide (GaAs) components, ranging from the planar substrate to those possessing complicated shapes and microstructures, have attracted extensive interest regarding their applications in photovoltaic devices, photodetectors and emerging quantum devices. Single point diamond turning (SPDT) is regarded as an excellent candidate for an industrially viable mechanical machining process, as it can generate nano-smooth surfaces, even on some hard-to-machine brittle materials such as silicon and silicon carbide, with a single pass. However, the extremely low fracture toughness and strong anisotropic machinability of GaAs makes it difficult to obtain nano-smooth, crack-free machined surfaces. To bridge the current knowledge gaps in understanding the anisotropic machinability of GaAs, this paper studied the mechanical material properties of (001)-oriented GaAs through indentation tests, assuming the diagonals of the indenter acted in the similar way of the cutting edge of a diamond tool with a negative rake angle. The results showed that the (001) plane of the GaAs material displayed harder and more brittle when indented along direction I (one diagonal of indenter parallel to the <110> orientation) compared to direction II (one diagonal of indenter parallel to the <100> orientation), which coincides with anisotropic machined surface quality by SPDT. This finding reveals, for the first time, that the strong crystallographic orientation dependence of both hardness and fracture toughness represents the underlying mechanism for the anisotropic machinability of GaAs. The paper presents a novel approach to evaluate the critical depth of cut under a high cutting speed comparable to SPDT and to determine the maximum feed rate for ductile-regime diamond turning. The 26.57 nm critical depth of cut was obtained for the hardest cutting direction using a large negative rake angle diamond tool. Finally, a nano-smooth surface was successfully generated along all the orientations in ductile-regime diamond turning, in which the material remove mechanism is considered as plastic deformation caused by high-density dislocations and the subsurface layer without any cracks remains single crystal structure. The results proves the proposed evaluation approach for the critical depth of cut and the maximum allowed feed rate is highly effective for guiding the ductile-regime machining of brittle materials.

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Section: Introductionmentioning

confidence: 99%

Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

Chen

Ding

Luo

et al. 2020

Precision Engineering

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“…In order to analyze the local distribution of the magnetic polarization, a twodimensional FEM model with a geometry corresponding to the configuration of the test structure was developed. A numerical analysis was conducted in the Comsol software which provides tools for modeling of multiphysics nonlinear problems [18][19][20].…”

Section: Magnetic Flux Distribution Inside the Structurementioning

confidence: 99%

Magnetic Properties and Flux Distribution in the LaFeCoSi/FeCoV Hybrid Structure

2017

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The study contains a description of magnetic properties of LaFeCoSi/FeCoV structure. The hybrid structure contains magnetocaloric LaFeCoSi core with high-induction ferromagnetic laminations. The magnetic field inside the magnetic structure is gained by the fringe field from FeCoV laminations. Results of modelling and experimental investigations of modified magnetic properties of LaFeCoSi/FeCoV structure were presented and discussed in the paper.

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“…The laser modification of photovoltaic cells is based on laser ablation of material, and it is associated with the absorption of electromagnetic radiation, which results in a significant heating of the structure, local melting, and evaporation of the substrate. The mentioned phenomena are described by Gecys, Westin, and Pawlak's groups [24][25][26][27]. During laser modification of photovoltaic cells, thermally induced structural local changes [28] or phase transitions to the metallic state [29] could be expected.…”

Section: Introductionmentioning

confidence: 97%

Efficiency of Laser-Shaped Photovoltaic Cells

et al. 2020

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The main aim of this paper is to analyze the influence of laser shaping of the photovoltaic cell based on its efficiency. The authors described both process of the monocrystalline photovoltaic cell manufacturing, its efficiency, and the possibilities of usage in architecture and the process of creating the photovoltaic cells of unconventional shapes by using laser technology. A method for cutting photovoltaic cells using a fiber laser was presented as well as the parameters of the laser cutting process. The described method allows cutting the massively produced silicon cells according to the predetermined trajectory. Using the proposed process parameters, satisfactory cutting edge quality, and negligible impact of the laser beam on changes in the structure of the photovoltaic cell active layers were achieved. In each cycle of structure cutting, only a small part of the material is removed (from 1 to 2 μm), and depending on the thickness, the process is repeated from 50 to 300 times. It has been shown that the efficiency of the modified cells depends on the ratio of their surface area to the laser cutting line.

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Selected problems in IR and UV laser micromachining of Si and GaAs in submillimeter scale

Cited by 10 publications

References 9 publications

Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

Magnetic Properties and Flux Distribution in the LaFeCoSi/FeCoV Hybrid Structure

Efficiency of Laser-Shaped Photovoltaic Cells

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