Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals

Inari, M.; Takeda, Junichiro; Motohisa, Junichi; Fukui, Takashi

doi:10.1016/j.physe.2003.11.091

Cited by 33 publications

(36 citation statements)

References 4 publications

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“…Considering the experimental condition for the growth of InP NWs in the SA-MOVPE (cross mark in Fig. 1), the P-trimer emerges under the growth conditions of the SA-MOVPE [7,8]. Figure 2 shows the calculated surface phase diagrams of Zn-incorporated surfaces as functions of temperature and P 2 pressure under low and high Zn pressure conditions (Figs.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, various types of morphology of InP NWs have been observed in the selective-area metalorganic vapor phase epitaxy (SA-MOVPE) on the InP(111)B substrate [7,8]. InP NWs tend to form a tripod structure that consists of three NWs pointing toward three-fold symmetric [ In order to obtain qualitative insights for the bidirectional growth of InP NWs on InP(111)B substrate, we here investigate the growth of InP thin film layers on InP(111)B substrate.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Zn Doping on the Surface Structure and Initial Growth Processes of InP Thin Film Layers on InP(111)B Substrate

Kato

Akiyama

Nakamura

et al. 2015

e-J. Surf. Sci. Nanotech.

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The effects of Zn atoms as a dopant on the surface structure and initial growth processes on InP(111)B substrate are theoretically investigated on the basis of surface phase diagrams which are obtained by comparing the adsorption energy given by ab initio calculations with the gas-phase chemical potentials. The calculated surface phase diagrams demonstrate that the Zn-incorporated surface is stabilized under the growth conditions with high Zn supply ratio. Furthermore, In atoms tend to easily adsorb on the Zn-incorporated surface as an In-P dimer due to the formation of Zn-P and P-P bonds, implying that the adsorption of In atoms and resultant growth processes are promoted on the Zn-incorporated InP(111)B surface which is stabilized under Zn-rich conditions. These results suggest that effects of Zn doping on the surface structure and initial growth processes are crucial for understanding the bidirectional growth mechanisms of InP nanowires on InP(111)B substrate.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of Zn Doping on the Surface Structure and Initial Growth Processes of InP Thin Film Layers on InP(111)B Substrate

Kato

Akiyama

Nakamura

et al. 2015

e-J. Surf. Sci. Nanotech.

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“…Considering this drawback, scientists have tried to develop an alternative method for InP NWs synthesis by using selective-area metal-organic vapour-phase epitaxy (SA-MOVPE) in the absence of catalyst [40][41][42][43][44].…”

Section: Synthesis Of Indium Phosphide Nanowiresmentioning

confidence: 99%

Indium phosphide nanowires and their applications in optoelectronic devices

Zafar¹,

Iqbal²

2016

Proc. R. Soc. A.

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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapourand solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

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“…1. We have reported that the growth direction of InAs NWs are in the 〈111〉B direction [9], while it is in the 〈111〉A direction [10], [11] for InP in selective-area MOVPE. This suggest that the InAsP growth direction is related to the composition of InAsP.…”

Section: Methodsmentioning

confidence: 99%

Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs

Kobayashi

Motohisa

Tomioka

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out microphotoluminescence (µ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.

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Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals

Cited by 33 publications

References 4 publications

Effects of Zn Doping on the Surface Structure and Initial Growth Processes of InP Thin Film Layers on InP(111)B Substrate

Effects of Zn Doping on the Surface Structure and Initial Growth Processes of InP Thin Film Layers on InP(111)B Substrate

Indium phosphide nanowires and their applications in optoelectronic devices

Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs

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