We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on selective-area MOVPE and nanowires are grown from small circular openings of SiO 2 mask defined on (111)B-oriented substrates. At optimized conditions, extremely uniform array of GaAs and InGaAs nanowires with diameter of about 200 nm was grown on GaAs and InP substrates, respectively. The nanowires have hexagonal cross-section and are perpendicular to the substrates, indicating that they are surrounded by {110} facet sidewalls. By reducing the mask opening size, nanowires with diameter down to 50 nm and length more than 5µm were successfully formed. Photoluminescence and transmission electron microscopy characterization was also carried out. (This article is published in J.

We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By doing growth on SiO 2 masked (111)B GaAs substrates with circular or hexagonal hole openings, extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {110} vertical facets with their diameter of order of 100 nm were obtained. Unexpectingly strong intense light emission was observed for the room temperature photoluminescence measurement of the pillar arrays in triangular lattice, which is promising for the application to the photonic crystals to enhance the light extraction efficiency from the materials with high refractive index. Furthermore, it was also found that hexagonal pillars with size 60 nm and large aspect ratio (> 100) by reducing the size of initial hole size of mask, opening a possibility to grow nanowires using epitaxial growth. (This article is published in Physica E, 23, 3-4, pp. 298-304 (2004).)

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