Selective deposition of diamond crystals by chemical vapor deposition using a tungsten-filament method

Hirabayashi, Keiji; Taniguchi, Y.; Takamatsu, Osamu; Ikeda, Takeshi; Ikoma, Keiko; Iwasaki‐Kurihara, N.

doi:10.1063/1.99789

Cited by 122 publications

(26 citation statements)

References 7 publications

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“…Implantation of C + (10 18 ions cm -2 , 65-120 keV) on Cu [32] and As + (10 14 ions cm -2 , 100 keV) on Si [105,128] enhances diamond nucleation, while Ar + implantation (3×10 15 ions cm -2 , 100 keV) on Si [129] decreases nucleation density. The lattice damages (strain, amorphous disorder and twinning) created by ion implantation are deemed to be responsible for nucleation enhancement [105].…”

Section: Surface Pretreatment Methods and Nucleation Enhancement Mechmentioning

confidence: 99%

Studies on nucleation process in diamond CVD: an overview of recent developments

Liu

Dandy

1995

Diamond and Related Materials

243

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This paper presents an updated and systematic overview of the recent development in studies on nucleation process in diamond CVD. The nucleation mechanisms are discussed, and the nucleation enhancement methods developed to date are summarized. The effects of surface conditions and deposition parameters on the surface nucleation are described. Finally, a brief description of theoretical and modeling studies on the surface nucleation is given.

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Section: Surface Pretreatment Methods and Nucleation Enhancement Mechmentioning

confidence: 99%

Studies on nucleation process in diamond CVD: an overview of recent developments

Liu

Dandy

1995

Diamond and Related Materials

243

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“…The simplest is abrasion of the substrate (Lee *Author for correspondence (amallik@cgcri.res.in) et al 1999) surface by mechanical polishing using diamond grit ranging in size from 10 nm-10 μm. The sample preparation techniques used for nucleation enhancement include scratching by diamond powder or any other abrasive (Mitsuda et al 1987;Chang et al 1988;Suzulu et al 1995), pre-deposition of interlayer (Feng et al 1993), seeding the substrate with diamond grit (Jansen et al 1990), electrical biasing of the substrates (Stoner et al 1992) and ion implantation of substrate surface (Hirabayashi et al 1988;Lin et al 1992). Among these, mechanical abrasion of substrate surface has proved most effective and cheapest.…”

Section: Introductionmentioning

confidence: 98%

Effect of substrate roughness on growth of diamond by hot filament CVD

et al. 2010

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Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high growth rate and faceted morphology of the diamond coatings. It has been shown that as we increase the substrate roughness from 0⋅05 μm to 0⋅91 μm (centre line average or CLA) there is enhancement in deposited film quality (Raman peak intensity ratio of sp 3 to non-sp 3 content increases from 1⋅65 to 7⋅13) and the substrate temperature can be brought down to 640°C without any additional substrate heating. The coatings grown at adverse conditions for sp 3 deposition has cauliflower morphology with nanocrystalline grains and coatings grown under favourable sp 3 condition gives clear faceted grains.

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“…A specialized CVD reactor, based on the known method of "hot filaments" [14,15], was used to deposit the films. In this method, the activation of the gas mixture (H 2 :CH 4 ) is carried out thermally, by means of incandescent tungsten filaments.…”

Section: Deposition Of Diamond Filmsmentioning

confidence: 99%

Deposition and Patterning of Polycrystalline Diamond Films Using Traditional Photolithography and Reactive Ion Etching

2017

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Abstract:Given the exceptional characteristics of diamond films, they have become increasingly popular in the fields of medicine, microelectronics, and detector electronics. However, despite all the advantages, there are many technological problems that complicate their widespread application and impose limitations on diamond use in technological processes. In this study, we proposed a new technique for obtaining a complex topology of polycrystalline diamond coatings by selective seeding of the substrate by nucleation centers and subsequent surface treatment with reactive ion etching to reduce the number of parasitic particles. As a result, diamond films were obtained with a high particle concentration in the film region and high repeatability of the pattern. Moreover, parasitic particles influenced neutralization in areas where film coverage was not needed. The effect of the diamond nanoparticle concentration in a photoresist and the effect of reactive ion etching on the formation of a continuous film and the removal of parasitic nucleation centers were examined. The relative simplicity, low power consumption, and high efficiency of this method make it attractive for both industrial and scientific applications.

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Selective deposition of diamond crystals by chemical vapor deposition using a tungsten-filament method

Cited by 122 publications

References 7 publications

Studies on nucleation process in diamond CVD: an overview of recent developments

Studies on nucleation process in diamond CVD: an overview of recent developments

Effect of substrate roughness on growth of diamond by hot filament CVD

Deposition and Patterning of Polycrystalline Diamond Films Using Traditional Photolithography and Reactive Ion Etching

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