Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

Weyher, J.L.; Ven, J. van de

doi:10.1016/0022-0248(83)90217-8

Cited by 93 publications

(45 citation statements)

References 13 publications

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“…KOH [19] and the DSL-etchant [20,21] were used in order to reveal dislocations and other imperfections. The EPD of the wafers was determined by dividing the KOH-etched surface into squares of 0.5 Â 0.5 mm 2 .…”

Section: Characterization Of the Samplesmentioning

confidence: 99%

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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Section: Characterization Of the Samplesmentioning

confidence: 99%

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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“…ratio. Finally the solution has been diliuted in water with 1:4 ratio so that the standard denomination is D 1:4 S 1/5 L according to ref [18]. The etching rate is increased by the white light illumination (halogen lamp).…”

Section: Resultsmentioning

confidence: 99%

Revealing of defects in CdTe crystals by DSL etching

Bissoli

Weyher

Zappettini³

et al. 2005

Cryst. Res. Technol.

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The effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the crystals with the aim of improving the growth technology and better devices performance. In fact it is well known that extensive defects in CdTe crystals have a relevant role on the material properties and finally on the devices performance. DSL solution previously used on Si, GaAs and InP, here has been used for the first time on CdTe crystals. The etching solutions have been used to characterize crystals with two different characteristics: the first group shows high electrical resistivity and close to stoichiometry composition, the second one shows low resistivity behaviour and large Te deviation. We report here the preliminary results of the characterization of these crystals with the DSL etching.

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“…Conventional etching technique for revealing dislocations in GaAs by using molten KOH is rather inconvenient because it requires heating to a temperature of 350-400ºC. In the present investigation we have adopted a method of ultrasonic-vibration aided etching proposed by Chen [6] who utilized, as a selective etchant, the CrO 3 -HF-H 2 O system, called DS, extensively studied by Weyher and van de Ven [7]. We performed etching in D 1:1 S 1/2 solution (where, according to the notation used in [7], D 1:x means dilution of 1 volume part of basic mixture with x volume parts of water and S a/b means a basic mixture consisting of a and b volume parts of HF (48 wt%) and CrO 3 (33 wt%) aqueous solutions, respectively), at room temperature.…”

mentioning

confidence: 99%

“…In the present investigation we have adopted a method of ultrasonic-vibration aided etching proposed by Chen [6] who utilized, as a selective etchant, the CrO 3 -HF-H 2 O system, called DS, extensively studied by Weyher and van de Ven [7]. We performed etching in D 1:1 S 1/2 solution (where, according to the notation used in [7], D 1:x means dilution of 1 volume part of basic mixture with x volume parts of water and S a/b means a basic mixture consisting of a and b volume parts of HF (48 wt%) and CrO 3 (33 wt%) aqueous solutions, respectively), at room temperature. As a source of ultrasonic vibration we used a commercial ultrasonic scrubber operating at a frequency of 25 kHz and output power of 30 W. This etching produces rectangular etch pits with distinct {111} facets, as shown in Fig.…”

mentioning

confidence: 99%

Revealing of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Yastrubchak

Łusakowska

Morawski

et al. 2004

phys. stat. sol. (c)

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Both threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures with a small lattice-mismatch have been investigated by means of chemical etching and atomic force microscopy (AFM). An anisotropic etching in HF-H 2 SO 4 -H 2 O 2 based aqueous solution was successfully used to determine the polarity of the crystallographic surfaces and an ultrasonic-vibration aided etching in CrO 3 -HF-H 2 O based solution was employed to reveal threading dislocations on the heterostructure surfaces. AFM measurements of surface morphology of the structures revealed a well-resolved cross-hatch pattern, which reproduced the network of underlying misfit dislocations, and, in addition, the outcrops of threading dislocations on the surface in a form of characteristic craters. Analysis of the results allowed drawing a conclusion on the mechanism of misfit strain relaxation in the investigated heterostructures.1 Introduction Lattice-mismatched GaAs-based heterostructures are of current interest because of their application in high-speed and optoelectronic devices. Epitaxial growth of those heterostructures is accompanied by a strain in the epitaxial layer that results from a difference in lattice parameters between the substrate and the layer. If the epitaxial layer is thin enough, the lattice misfit can be accommodated by elastic strain of the layer. However, when the layer thickness exceeds a critical value, misfit dislocations are generated at the interface to relieve some of the strain. In heteroepitaxial semiconductor systems with zinc-blende structure and a small lattice mismatch, grown on (001)-oriented substrates, orthogonal arrays of 60° misfit dislocations lying along two different 〈110〉 crystallographic directions are formed at the interface. The misfit dislocations are associated with threading dislocations which propagate through the epitaxial layer up to the surface.Dislocations play an important role in the technology of semiconductor materials and devices owing to their influence, mostly detrimental, on various electronic and mechanical processes. Current requirements for device miniaturization make the influence of dislocations on their performance and reliability increasingly important. Moreover, ideas of taking an advantage of specific electronic properties of dislocations in designing new electronic devices have been proposed; cf. [1]. To those ideas belongs the use of single misfit dislocations as a source and drain in a very short-channel field-effect transistor. More recently, dislocations have been utilized for the fabrication of silicon-based light-emitting diodes compatible with ultra-large-scale integration (ULSI) technology [2]. In those diodes a local strain field of intentionally introduced dislocation loops, which modifies the semiconductor band structure, provides spatial confinement of charge carriers and drastically improves the room-temperature efficiency of electroluminescence of the diodes.

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Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

Cited by 93 publications

References 13 publications

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Revealing of defects in CdTe crystals by DSL etching

Revealing of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

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