Selective etching of InGaAs/InP substrates from II–VI multilayer heterostructures

Moug, Richard T.; Alfaro‐Martínez, Adrián; Peng, Le; Garcia, Thor; Deligiannakis, Vasilios; Shen, Aidong

doi:10.1002/pssc.201100716

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…The II-VI sample is transferred by entirely removing both the InP substrate and the InGaAs buffer layer, following Moug et al [20]. Once the InGaAs is removed, the only remaining material still attached to the glass with the PEG is the II-VI epi-layer.…”

Section: Epitaxial Lift-off and Transfermentioning

confidence: 99%

“…Diamond is typically used as an intracavity heatspreader [15], or extracavity heat-sink [16]; the former requiring good optical contact as well as thermal contact between the diamond and the intracavity surface of the sample, which can be achieved via capillary bonding (e.g. [17][18][19] [20]; however, in that case the structures were adhered to glass using wax, and cracking or buckling of the II-VI material was observed. This was attributed to strain in the epitaxial structure, despite the support of the adhesive, preventing further transfer of the structures.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…The etch selectivity of the solution with InGaAs allows for the sample to remain in the acid until complete substrate removal. The InGaAs buffer is then etched using H 3 PO 4 :H 2 O 2 :H 2 O (1:1:6) which has a high etch selectivity for the InGaAs/ZnCdSe interface (68:1) with an etch rate of 22.5 nm/sec[20] for InGaAs. The sample changes colour over the course of the etch, through red to a translucent yelloworange (depending on structure reflectivity and transmission characteristics) indicating that the InGaAs is fully removed (seeFigure 4(b)).…”

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confidence: 99%

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Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

et al. 2015

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Lattice-matched II-VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visiblelight absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 µm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface-and edge-emitting photoluminescence A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependant QW emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in QW emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications.

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Section: Epitaxial Lift-off and Transfermentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

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confidence: 99%

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Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

et al. 2015

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“…The quantum wells emit at 540 nm in a resonant periodic gain configuration for potential alternative use as a laser gain medium [9]. The InP substrate was removed by a combination of mechanical polishing and wet etch process using a solution of HCl:H 3 PO 4 in a ratio of 3:1, followed by the removal of the InGaAs layer with a solution of H 3 PO 4 :H 2 O 2 :H 2 O, in a ratio of 1:1:6 for maximum etch selectivity with the II-VI material [10]. The epi-side is fixed onto a temporary glass substrate for this step, using a wax, for mechanical support during processing.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

Santos

Jones

Schlosser

et al. 2015

Semicond. Sci. Technol.

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The rapid emergence of gallium-nitride (GaN) light-emitting diodes (LEDs) for solid-state lighting has created a timely opportunity for optical communications using visible light. One important challenge to address this opportunity is to extend the wavelength coverage of GaN LEDs without compromising their modulation properties. Here, a hybrid source for emission at 540 nm consisting of a 450 nm GaN micro-sized LED (micro-LED) with a micron-thick ZnCdSe/ZnCdMgSe multi-quantum-well color-converting membrane is reported. The membrane is liquid-capillary-bonded directly onto the sapphire window of the micro-LED for full hybridization. At an injection current of 100 mA, the color-converted power was found to be 37 μW. At this same current, the −3 dB optical modulation bandwidth of the bare GaN and hybrid micro-LEDs were 79 and 51 MHz, respectively. The intrinsic bandwidth of the color-converting membrane was found to be power-density independent over the range of the micro-LED operation at 145 MHz, which corresponds to a mean carrier lifetime of 1.9 ns.

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Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate

Chappell

Guilhabert

Garcia

et al. 2020

Opt. Mater. Express

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Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-µm-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 µm2, similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at ∼520 nm and a thermal redshift of 4 nm with ∼3.6 MWm−2 continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices.

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Selective etching of InGaAs/InP substrates from II–VI multilayer heterostructures

Cited by 3 publications

References 6 publications

Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate

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