We report ZnCdSe/ZnCdMgSe Quantum Cascade structures with “two-phonon” and “bound-to-continuum” active region designs. The electroluminescence shows more than 3 times higher luminescence efficiency and 40% narrower linewidth (<30 meV) than previous reports. The measured turn-on voltage matches closely the calculated value, indicating the improved electron transport characteristics in these structures. A waveguide design suitable for mode confinement in this material system is also presented, which resulted in a structure with a single narrow electroluminescence peak for all temperatures from 80 to 300 K.

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Typically, II–VI heterostructures and devices are grown on commercially available III–V substrates. Often these substrates have strong absorption at the emission energy of the epitaxial layer, a problem when transmission measurements are required, as well as for some device applications. By removing the epilayers from the substrate the layer properties can be examined unhindered by the presence of the substrate. In this paper we present a selective etching technique for the removal of InGaAs/InP substrates from ZnMgCdSe‐based epitaxial structures. Characterization of the materials after etching indicated the material is not damaged in the etching process. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Articles you may be interested inNear infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer J. Vac. Sci. Technol. B 32, 02C105 (2014); 10.1116/1.4863496 Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substratesThe authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 lm and 4.0 lm have been obtained.