Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers

Alfaro‐Martínez, Adrián; Hernández‐Calderón, I.

doi:10.1016/j.mejo.2007.07.116

Cited by 18 publications

(5 citation statements)

References 5 publications

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“…In particular, CdSe, CdSe x Te (1 À x) and Cd x Zn (1 À x) Se alloys have been used as active optical region in low dimensional structures based on ultra thin quantum wells [1][2][3][4] and quantum dots [5]. The growth of CdSe strained epilayers on ZnSe has been relatively difficult due to the small critical thickness (less than 4 monolayers) [for an overview see [1,2,6]; on the other hand, relaxed layers exhibit structural defects and high density of dislocations near the interface due to lattice mismatch [7].…”

Section: Introductionmentioning

confidence: 99%

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Larramendi¹,

Gutiérrez²,

Melo³

et al. 2010

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Larramendi¹,

Gutiérrez²,

Melo³

et al. 2010

Journal of Crystal Growth

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“…[23][24][25] Higher Cd contents can be obtained only by reducing the QW thickness as is the case of ultrathin CdSe/ZnSe QWs with subnanometric thicknesses in the 1-3 MLs range. [15,26]…”

Section: Resultsmentioning

confidence: 99%

Room‐Temperature Yellow Emission of a High Cd Content (x = 0.70), Highly Strained, Layer‐by‐Layer Grown Zn_1−xCd_xSe/ZnSe Quantum Well

Villa-Martínez

Šutara

Hernández‐Calderón

2022

Physica Status Solidi (b)

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The results of the growth and characterization of an 8 monolayers (MLs) thick Zn1−xCdxSe/ZnSe quantum well (QW) with quite high Cd content (x = 0.70) are presented. At room temperature (RT), the QW presents yellow excitonic emission at 2.179 eV (569 nm, same color as the yellow line of a Kr ion laser). Despite the large Cd content, the RT photoluminescence spectrum shows a well‐defined, symmetric excitonic peak with relatively narrow full width at half maximum, indicating a good structural quality of the QW that is attributed to the sequential layer‐by‐layer growth mode achieved by the use of the submonolayer pulsed beam epitaxy (SPBE) technique. The ZnSe barriers are grown by molecular beam epitaxy (MBE); the QW heterostructure is deposited on top of a GaAs(001) substrate at 275 °C. Scanning transmission electron microscopy indicates a homogeneous smooth QW layer. The evolution of the excitonic emission energy with increasing temperature in the 19–300 K range shows the well‐known S‐shaped behavior that is interpreted in terms of exciton migration.

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“…Сведения о реальной структуре тонкого слоя, которая зависит от элементного состава гетероструктуры, номинальной толщины слоя и технологии его роста, можно получить методами электронной микроскопии и оптической спектроскопии. Данные ряда работ [1][2][3][4][5][6][7][8][9] для гетероструктур типа II−VI, в частности, для системы CdTe/ZnTe с одной и той же номинальной толщиной узкозонного слоя, существенно различаются относительно энергетического положения и формы полосы излучения. Это свидетельствует о сильной зависимости реального строения тонкого слоя от технологических условий его формирования.…”

Section: Introductionunclassified

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

Агекян¹,

Serov²,

Filosofov³

et al. 2020

Физика Твердого Тела

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The luminescence of CdTe layers with a nominal thickness of 1, 2, 4, and 8 monolayers grown by atomic layer epitaxy in ZnTe matrix was studied. It is shown that layers with a thickness of 1 and 2 monolayers are homogeneous, while layers with a nominal thickness of 4 and 8 monolayers are the planar QD arrays. The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of CdTe layer. The luminescence excitation spectra of CdTe layer in the samples vary significantly. It has been shown that, depending on the energy distance between the CdTe and ZnTe exciton levels, the ratio of contributions to the energy transfer via the exciton ZnTe and charge carriers varies greatly.

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Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers

Cited by 18 publications

References 5 publications

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Room‐Temperature Yellow Emission of a High Cd Content (x = 0.70), Highly Strained, Layer‐by‐Layer Grown Zn_1−xCd_xSe/ZnSe Quantum Well

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

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Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers

Cited by 18 publications

References 5 publications

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Room‐Temperature Yellow Emission of a High Cd Content (x = 0.70), Highly Strained, Layer‐by‐Layer Grown Zn1−xCdxSe/ZnSe Quantum Well

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

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Room‐Temperature Yellow Emission of a High Cd Content (x = 0.70), Highly Strained, Layer‐by‐Layer Grown Zn_1−xCd_xSe/ZnSe Quantum Well