Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

Abstract

Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs∕AZO∕p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

“…Research on ZnO nanostructures has been usually focused on both nanoscale and self-assembly fabrication techniques [9][10][11]. In this dynamic field, other topics like doping and morphology control of individual nanostructures are also of interest, since nanoscale structures are supposed to be the building blocks for the future fabrication of advanced devices such as nano-FETs, nano-LEDs, and nano-lasers [12][13][14].…”

Preparation and properties of Ni-doped ZnO rod arrays from aqueous solution

“…Owing to a direct wide band gap (3.37 eV), large exciton binding energy (60 meV), and superior conducting properties based on oxygen vacancies, excellent electro and optical properties [1][2][3], the wurtzite-structured ZnO has become one of the most promising materials for the fabrication of high-technology applications such as photonic crystals, light-emitting diodes, sensors, electroand photoluminescent materials [4,5]. The key requirements for these applications are that ZnO materials have the good electrical, optical, and magnetic properties and that the control of the shape and crystal structure is important.…”

Facile synthesis of well-aligned ZnO nanowire arrays and their photoluminescence properties

“…There is also a blue shift of UV emission as the diameter of the nanowires decreases: the center peak positions of UV emission are at 385.1, 382.4, 379.2 nm at for the samples 1, 2 and 3, respectively. Such blue shift can be attributed to reduction of band gap caused by tensile stress [30], or change in the concentrations of native defects [31], which is often observed in some ZnO nanostructures.…”