Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

“…In fact, the binary InN material has unique and excellent intrinsic properties with the narrowest band gap of all the III-nitride family, low effective mass and a large drift-velocity, making it an ideal candidate for infrared light emitters and high-speed electronic devices [2], [3], [4], [5], [6] . However, the growth of high-quality InN layers is hampered by the high lattice mismatch with usual substrates [2], [7], [8], [9], [10], [11] . In an effort to circumvent this limitation, the 1D geometry of nanowires is used [12] .…”

“…The SAG was performed on SiN masked Ga-polar GaN/c-Al2O3 templates with circular openings of 200 nm. It resulted in perfectly hexagonal InN nanorods delimited with (1-100) m-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-planes and the top (0001) c-plane. However, it was reported that the optical and electrical properties of 1D nitride structures may heavily depend on their shape [23] .…”

“…The III-nitride materials are promising for applications such as light-emitting diodes (LEDs), laser diodes, high-power transistors, and photovoltaics . In fact, the binary InN material has unique and excellent intrinsic properties, with the narrowest band gap of all the III-nitride family, low effective mass, and a large drift velocity, making it an ideal candidate for infrared light emitters and high-speed electronic devices. − However, the growth of high-quality InN layers is hampered by the high lattice mismatch with usual substrates. ,− In an effort to circumvent this limitation, the 1D geometry of nanowires is used . The small footprint on the substrate surface serves to improve the crystal quality and reduce the dislocation density through effective stress relaxation .…”

Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

“…It has been applied to achieve the epitaxial lateral overgrowth (ELOG) of GaN-based laser diodes for reducing the threading dislocation density. Until now, there are only a few reports on the SAG of InN, in which Mo-mask-patterned (0001) sapphire [11], Mo-mask-patterned (111) Si [17], nanohole-patterned GaN templates [18], and ultra-thin AlN masks were used [19]. However, the AlN masks are not periodical, and the fabrication of the metal masks is relatively expensive and complex.…”

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

“…In recent times, the crystal quality of InN has been enormously improved with controlled growth techniques such as molecular beam epitaxy and metal organic chemical vapour deposition. [5][6][7][8][9][10] In the last decade, the band gap of InN has been revised to B0.75 eV and the accepted band gap is less than the previously predicted value of B2 eV. The revised band gap value of InN opened up new applications in the infrared (IR) region as emitters and detectors.…”