Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

Shul, R. J.; Willison, C. G.; Bridges, M. M.; Han, Jung; Lee, J. W.; Pearton, S. J.; Abernathy, C. R.; MacKenzie, J. D.; Donovan, S. M.; Zhang, L.; Lester, L. F.

doi:10.1116/1.581130

Cited by 58 publications

(18 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared to pure Cl 2 , there is etch rate suppression with the addition of N 2 and significant etch rate enhancement with the addition of Ar (see Table I). Etch rate suppression with the addition of N 2 has been observed by Shul et al 11 However, Sheu et al 12 reported higher GaN etch rate for the Cl 2 /N 2 recipe compared to the Cl 2 /Ar recipe, which is opposite of what we have observed. Comparing the dc self-bias in Table I, it is evident that the addition of Ar or N 2 results in the reduction of dc self-bias from pure Cl 2 value, which only indicates an increase in ion flux in both cases.…”

Section: Resultscontrasting

confidence: 65%

“…The breaking of Ga-N bonds by ion bombardment was speculated to be the rate-limiting step in ICP etching of nitrides. Shul et al 11 reported Cl 2 /N 2 /Ar chemistry among other plasma chemistries, where the addition of nitrogen was linked to the reduction of nitride etch rates. They indicated that under the experimental plasma condition, the etch was dominated by ion bombardment.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Paramanik

Motayed

Aluri

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

This paper details the fabrication of GaN nanoscale structures using deep ultraviolet lithography and inductively coupled plasma (ICP) etching techniques. The authors controlled the geometry (dimensions and shape) and surface morphology of such nanoscale structures through selection of etching parameters. The authors compared seven different chlorine-based etch chemistries: Cl2, Ar, Cl2/N2, Cl2/Ar, Cl2/N2/Ar, Cl2/H2/Ar, and Cl2/He/Ar. The authors found that nitrogen plays a significant role in fabricating high quality etched GaN nanostructures. This paper presents the effects of varying the etch parameters, including gas chemistry, gas flow rate, ICP power, rf power, chamber pressure, and substrate temperature, on the etch characteristics, including etch rate, sidewall angle, anisotropy, mask erosion, and surface roughness. Dominant etch mechanisms in relation to the observed characteristics of the etched features are discussed. Utilizing such methods, the authors demonstrated the fabrication of nanoscale structures with designed shapes and dimensions over large area. Nanocolumns with diameter of 120 nm and height of 1.6 μm with sidewall angle of 86° (90° represent a vertical sidewall) were fabricated. Nanocones with tip diameter of 30 nm and height of 1.6 μm with sidewall angle of 70° were demonstrated. Such structures could potentially be used in light-emitting diodes, laser diodes, photodetectors, vertical transistors, field emitters, and photovoltaic devices. This study indicates the feasibility of top-down methods in the fabrication of next-generation nitride-based nanoscale devices, with large-area uniformity and scalability.

show abstract

Section: Resultscontrasting

confidence: 65%

Section: Introductionmentioning

confidence: 98%

Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Paramanik

Motayed

Aluri

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…As a result, many of the etched features have rough sidewall profiles. Aluminum nitride (AlN) has been successfully etched using chlorine-based chemistries [ 119 , 120 ] and etch rates of 0.23 microns per minute have been reported [ 121 ]. RIE etching of Zinc Oxide (ZnO) has been also reported with etch rate of 0.12 microns per minute using CF 4 /Ar, Cl 2 /Ar, and BCl 3 /Ar process gases [ 122 ].…”

Section: Deep High-aspect-ratio Etching Of Piezoelectric Materialsmentioning

confidence: 99%

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Huff

2021

Micromachines

142

View full text Add to dashboard Cite

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

show abstract

“…The basic chemistries employed in the III-nitrides dry etching are chlorine based, such as Cl 2 and BCl 3 [57]. Moreover, Ar [52], N [54], H [58] and F [59] based chemistries can also be added to achieve better etching rate, selectivity and surface morphology [60]. Study [57] showed that the etching rate was found to increase with the ICP antenna RF power up to a certain level (e.g., 600 W).…”

Section: Mesa Etchingmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

View full text Add to dashboard Cite

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

show abstract

Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

Cited by 58 publications

References 17 publications

Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Contact Info

Product

Resources

About