Selective Reactive Ion Etching of Indium‐Tin Oxide in a Hydrocarbon Gas Mixture

Saia, R.; Kwasnick, R. F.; Wei, Ching-Yeu

doi:10.1149/1.2085616

Cited by 25 publications

(8 citation statements)

References 7 publications

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“…7 This is due to a͒ Author to whom correspondence should be addressed; electronic mail: frank.greer@jpl.nasa.gov the tendency of the oxygen in the ITO to form volatile CO x species, while indium metal forms a volatile organometallic compound, In͑CH 3 ͒ 3 . 7,8 The second indium oxide removal method tested was a chlorine plasma. It was hoped that the chlorine plasma would imitate the chemical etch of indium oxide observed during an HCl dip, without the problems of bump undercut present with isotropic HCl wet etches.…”

Section: Introductionmentioning

confidence: 99%

Plasma treatment methods to improve indium bump bonding via indium oxide removal

Greer

Dickie

Vasquez

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Flip chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices which directly connects an active element or a detector to a substrate readout face down, eliminating the need for wire bonding. Indium bump technology has been a part of hybridization for many years and has been extensively employed in the infrared imager industry. However, obtaining a reliable, high yield process for high density patterns of bumps can be quite difficult in part due to the tendency of the indium bumps to oxidize during exposure to air. In this study, plasma, thermal, and wet chemical methods were screened to determine their ability to remove indium oxide from indium bumps. A novel two-step plasma process using methane, argon, and hydrogen was developed that removes indium oxide from indium bumps after prolonged air exposure while maintaining a low sample temperature. This method was tested by fabricating a fully hybridized scientific grade visible complementary metal oxide semiconductor detector and imaging a standard test pattern.

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Section: Introductionmentioning

confidence: 99%

Plasma treatment methods to improve indium bump bonding via indium oxide removal

Greer

Dickie

Vasquez

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…To make the patterns more resistant to dry etching, samples were hard-baked in an oven overnight at 80°C. To etch the ITO, samples were etched under a 5-mTorr atmosphere with 200 sccm Ar, 2,500 W RF power, and 80 W delivered to the platen in a deep reactive ion etch tool (STS LpX Pegasus) (30). Under these conditions, the etch rate of ITO was found to be ∼1 Å/s.…”

Section: Methodsmentioning

confidence: 99%

A cantilever-free approach to dot-matrix nanoprinting

Brown

Eichelsdoerfer

Shim

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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Scanning probe lithography (SPL) is a promising candidate approach for desktop nanofabrication, but trade-offs in throughput, cost, and resolution have limited its application. The recent development of cantilever-free scanning probe arrays has allowed researchers to define nanoscale patterns in a low-cost and high-resolution format, but with the limitation that these are duplication tools where each probe in the array creates a copy of a single pattern. Here, we report a cantilever-free SPL architecture that can generate 100 nanometerscale molecular features using a 2D array of independently actuated probes. To physically actuate a probe, local heating is used to thermally expand the elastomeric film beneath a single probe, bringing it into contact with the patterning surface. Not only is this architecture simple and scalable, but it addresses fundamental limitations of 2D SPL by allowing one to compensate for unavoidable imperfections in the system. This cantilever-free dot-matrix nanoprinting will enable the construction of surfaces with chemical functionality that is tuned across the nano-and macroscales.nanofabrication | polymer pen lithography | thermal actuation | soft microelectromechanical systems

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“…The plasma etching of ITO films has been reported, using a capacitively coupled plasma as well as an ICP and an ECR plasma, where halogen gases and organic gases were used. In the case of halogen gases, such as CCl 4 and HCl, it is comparatively easy to obtain a high etch rate of ~70 nm/min, forming InCl 3 and SnCl 4 as etch products, while the selectivity to silicon dioxide or silicon nitride is relatively low [ 18 , 19 ]. Investigation of the cleaning of the chamber wall after the chlorine plasma etching of ITO films provided promising results for maintenance [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma

et al. 2021

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This paper presents the dry etching characteristics of indium tin oxide (ITO)/Ag/ITO multilayered thin film, used as a pixel electrode in a high-resolution active-matrix organic light-emitting diode (AMOLED) device. Dry etching was performed using a combination of H2 and HCl gases in a reactive ion etching system with a remote electron cyclotron resonance (ECR) plasma source, in order to achieve high electron temperature. The effect of the gas ratio (H2/HCl) was closely observed, in order to achieve an optimal etch profile and an effective etch process, while other parameters—such as the radio frequency (RF) power, ECR power, chamber pressure, and temperature—were fixed. The optimized process, with an appropriate gas ratio, constitutes a one-step serial dry etch solution for ITO and Ag multilayered thin films.

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Selective Reactive Ion Etching of Indium‐Tin Oxide in a Hydrocarbon Gas Mixture

Cited by 25 publications

References 7 publications

Plasma treatment methods to improve indium bump bonding via indium oxide removal

Plasma treatment methods to improve indium bump bonding via indium oxide removal

A cantilever-free approach to dot-matrix nanoprinting

One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma

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