Self-aligned double patterning layout decomposition with complementary e-beam lithography

Gao, Jhih-Rong; Yu, Bei; Pan, David Z.

doi:10.1109/aspdac.2014.6742880

Cited by 18 publications

(7 citation statements)

References 16 publications

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“…By extending the line-end of the wires, some conflicted layout patterns can be resolved for end-cutting approach. For patterns which can not be resolved by wire extension, they will be marked or be printed by alternative lithography technique, such as Ebeam [16].…”

Section: Overview Of End-cutting Processmentioning

confidence: 99%

Directed Self-Assembly Based Cut Mask Optimization for Unidirectional Design

Gao

et al. 2015

Proceedings of the 25th Edition on Great Lakes Symposium on VLSI

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Unidirectional design has attracted lots of attention with the scaling down of technology nodes. However, due to the limitation of traditional lithography, printing the randomly distributed dense cuts becomes a big challenge for highly scaled unidirectional layout. Recently directed self-assembly (DSA) has emerged as a promising lithography technique candidate for cut manufacturing because of its ability to form small cylinders inside the guiding templates and the actual pattern size can be greatly reduced. In this paper, we perform a comprehensive study on the DSA cut mask optimization problem. We first formulate it as integer linear programming (ILP) to assign cuts to different guiding templates, targeting at minimum conflicts and line-end extensions. As ILP may not be scalable for very large size problem, we further propose a speed-up method to decompose the problem into smaller ones and solve them separately. We then merge and legalize the solutions without much loss of result quality. The proposed approaches can be easily extended to handle more DSA guiding patterns with complicated shapes. Experimental results show that our methods can significantly reduce the total number of unresolvable patterns and the line-end extensions for the targeted layouts.

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Section: Overview Of End-cutting Processmentioning

confidence: 99%

Directed Self-Assembly Based Cut Mask Optimization for Unidirectional Design

Gao

et al. 2015

Proceedings of the 25th Edition on Great Lakes Symposium on VLSI

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“…It is also necessary to figure out the way to generate features under the new approaches. Some studies have been done to combine SADP and EBL [27,28] and then an extension to 2D layout design has been proposed [29]. Recently, Yang et al [30] proposed a random-initialized local search method to combine MPL and EBL when considering stitch minimization and EBL throughput simultaneously.…”

Section: Decomposition For Hybrid Lithographymentioning

confidence: 99%

Pushing multiple patterning in sub-10nm

Pan

Liebmann

et al. 2015

Proceedings of the 52nd Annual Design Automation Conference

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Due to elongated delay of extreme ultraviolet lithography (EUVL), the semiconductor industry has been pushing the 193nm immersion lithopgrahy using multiple patterning to print critical features in 22nm/14nm technology nodes and beyond. Multiple patterning lithography (MPL) poses many new challenges to both mask design and IC physical design. The mask layout decomposition problem has been extensively studied, first on double patterning, then on triple or even quadruple patterning. Meanwhile, many studies have shown that it is very important to consider MPL implications at early physical design stages so that the overall design and manufacturing closure can be reached. In this paper, we provide a comprehensive overview on the state-of-the-art research results for MPL, from synergistic mask synthesis to physical design. We will also discuss the open problems as to pushing multiple patterning in sub-10nm.

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“…To obtain a manufacturable layout based on SADP with complementary EBL, most of the previous works focus on minimizing overlay errors and e-beam shots during layout decomposition by using integer linear programming (ILP) based algorithms [2,3,6]. However, no previous work is known for optimizing the cutting structures around the symmetry patterns in analog circuits.…”

Section: Introductionmentioning

confidence: 98%

Cutting structure-aware analog placement based on self-aligned double patterning with e-beam lithography

Tseng

Chang

2015

Proceedings of the 52nd Annual Design Automation Conference

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Self-aligned double patterning (SADP) with complementary e-beam lithography (EBL) is one of the most promising hybrid-lithography techniques for sub-20nm designs. The complementary EBL mitigates the deficiencies of using a single cut mask in SADP. However, the low throughput and negative side effects of EBL might significantly increase the manufacturing costs and damage the symmetry properties in analog circuits. In this paper, we present the first work that considers SADP with EBL during analog placement to simultaneously optimize the area, wirelength, overlay errors, and e-beam shots. We first propose an overlay and cut conflict-aware SADP decomposition algorithm to optimize the overlay errors and e-beam shots in a layout. Then, a dynamic programming based module shifting technique is developed based on a symmetry-feasible slicing tree formulation to further minimize the differences of overlay errors and e-beam shots between symmetry modules during analog placement. To explore and obtain a desired placement, an analog placement flow is also presented. Experimental results show that our flow can effectively and efficiently reduce area, overlay errors, and e-beam shots while satisfying the symmetry constraints for analog placement.

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Self-aligned double patterning layout decomposition with complementary e-beam lithography

Cited by 18 publications

References 16 publications

Directed Self-Assembly Based Cut Mask Optimization for Unidirectional Design

Directed Self-Assembly Based Cut Mask Optimization for Unidirectional Design

Pushing multiple patterning in sub-10nm

Cutting structure-aware analog placement based on self-aligned double patterning with e-beam lithography

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