Self-assembled growth of inclined GaN nanorods on (10−10) m-plane sapphire using metal–organic chemical vapor deposition

Soochun, Chae; Lee, Kyu-Seung; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun

doi:10.1016/j.jcrysgro.2014.09.040

Cited by 13 publications

(12 citation statements)

References 42 publications

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“…[9]. Very few reports have been found on the growth of non-polar and semipolar GaN NRs, that too by sophisticated MOCVD method [10]. But in this report, we demonstrate the growth of GaN NRs in all orientations by the simple catalyst-free HVPE method, without any special surface treatment for the nucleation or growth.…”

Section: Introductionmentioning

confidence: 57%

“…An inclined intertwined alignment is observed both from lateral and top view of (d) 10 10 ½ m-plane sapphire. XRD pattern in Fig.…”

Section: Analysis and Resultsmentioning

confidence: 94%

“…In the case of a-plane sapphire, a N-rich or Ga-poor conditions on the surface during growth result in the formation of a-plane GaN grains elongated along the c-axis. The a-plane GaN epilayers when grown at higher temperatures lead to increased Ga desorption which results in N-rich condition [10]. Non-polar a-plane is inherently anisotropic along the two in-plane directions And a high Ga/N flux ratio ensures an increased Ga coverage of the surface during growth, which eventually reduces the surface anisotropy by decreasing the diffusion barrier anisotropy.…”

Section: Epitaxial Relationshipmentioning

confidence: 99%

“…In m-plane sapphire, the single semipolar 11 12 ½ GaN phase nucleates on 10 10 ½ m-sapphire substrate. But in HVPE growth, it does not favor the additional growth along [0002] GaN which is found to appear in MOCVD growth.…”

Section: Epitaxial Relationshipmentioning

confidence: 99%

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HVPE growth of self-aligned GaN nanorods on c-plane, a-plane, r-plane, and m-plane sapphire wafers

et al. 2015

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Herein, we report the self-aligned growth of GaN nanorods on different orientations of sapphire like c-, a-, rand m-plane substrates by hydride vapor phase epitaxy. Vertical c-axis orientation of GaN NRs is obtained on c-plane [0001] and a-plane 11 20 ½ sapphire and a skew or inclined NRs on r-plane, and inclined intertwined but self-aligned NR array was formed on m-plane sapphire. GaN (002) and (004) peaks were obtained on c-and a-plane sapphire, whereas (110), (103), and (103) only were observed on r-and mplanes, respectively. In the case of r-and m-plane-grown GaN, A 1 transverse optical mode is dominant, and the A 1 longitudinal optical mode is suppressed. Conversely, in the case of c-and a-plane, it is reversed. The probable reason is the optical mode vibrations difference along the differently inclined NRs surfaces. In addition, the specimen exhibits surface optical modes too. The optical behavior of GaN NR on m-sapphire shows an intensity variation when measured in different angular rotations of the specimen by photoluminescence which is because of the higher area of excitation in the case of axial surfaces and lower area of excitation in radial surface. Their epitaxial crystallographic relationship with the substrates and the reasons for the self-aligned orientations are discussed. The anomalies found in the optical behavior are attributed to Raman antenna effect and so on. The self-aligned intertwined GaN NRs find suitable applications in polarizer.

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Section: Introductionmentioning

confidence: 57%

“…An inclined intertwined alignment is observed both from lateral and top view of (d) 10 10 ½ m-plane sapphire. XRD pattern in Fig.…”

Section: Analysis and Resultsmentioning

confidence: 94%

Section: Epitaxial Relationshipmentioning

confidence: 99%

Section: Epitaxial Relationshipmentioning

confidence: 99%

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HVPE growth of self-aligned GaN nanorods on c-plane, a-plane, r-plane, and m-plane sapphire wafers

et al. 2015

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“…In our previously published results, growth of inclined (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN NRs was also observed on the c-plane facets of a-GaN nucleation. 23,24 As a result, we found that the a-GaN nucleation layer plays an important role in the growth along different directions of inclined GaN NRs on nitridated m-sapphire substrates. The tilted angle and growth direction of these inclined GaN NRs are similar to the growth of (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (10-13) oriented-semipolar GaN films on m-sapphire substrates.…”

Section: -2mentioning

confidence: 78%

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

et al. 2016

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Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalystfree metal-organic chemical vapor deposition In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metalorganic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5• to the [10-10] sapp direction. Specifically, the GaN NRs grew in a single inclined direction to the [11][12][13][14][15][16][17][18][19][20] sapp . Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking faultrelated defects using high-resolution transmission electron microscopy. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates

Wang¹,

Wei²,

Liu³

et al. 2018

J Mater Sci

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Self-assembled growth of inclined GaN nanorods on (10−10) m-plane sapphire using metal–organic chemical vapor deposition

Cited by 13 publications

References 42 publications

HVPE growth of self-aligned GaN nanorods on c-plane, a-plane, r-plane, and m-plane sapphire wafers

HVPE growth of self-aligned GaN nanorods on c-plane, a-plane, r-plane, and m-plane sapphire wafers

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates

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