Self-Assembled Nanofeatures in Complex Three-Dimensional Topographies via Nanoimprint and Block Copolymer Lithography Methods

Abstract

Achieving ultrasmall dimensions of materials and retaining high throughput are critical fabrication considerations for nanotechnology use. This article demonstrates an integrated approach for developing isolated sub-20 nm silicon oxide features through combined “top-down” and “bottom-up” methods: nanoimprint lithography (NIL) and block copolymer (BCP) lithography. Although techniques like those demonstrated here have been developed for nanolithographic application in the microelectronics processing industry, similar approaches could be utilized for sensor, fluidic, and optical-based devices. Thus, this article centers on looking at the possibility of generating isolated silica structures on substrates. NIL was used to create intriguing three-dimensional (3-D) polyhedral oligomeric silsesquioxane (POSS) topographical arrays that guided and confined polystyrene- block -poly(dimethylsiloxane) (PS- b -PDMS) BCP nanofeatures in isolated regions. A cylinder forming PS- b -PDMS BCP system was successfully etched using a one-step etching process to create line-space arrays with a period of 35 nm in confined POSS arrays. We highlight large-area (>6 μm) coverage of line-space arrays in 3-D topographies that could potentially be utilized, for example, in nanofluidic systems. Aligned features for directed self-assembly application are also demonstrated. The high-density, confined silicon oxide nanofeatures in soft lithographic templates over macroscopic areas illustrate the advantages of integrating distinct lithographic methods for attaining discrete features in the deep nanoscale regime.

Optimizing Polymer Brush Coverage To Develop Highly Coherent Sub-5 nm Oxide Films by Ion Inclusion

“…The continual aggressive miniaturization of semiconductor devices with critical dimensions approaching 5 nm has led to cost and integration challenges . Novel methods to compliment optical lithography (namely, i193 and EUV) include block copolymer − (BCP) lithography, nanoimprint lithography, , and, more recently, area-selective deposition (ASD). These methods are potential candidates for integration into future fabrication and the possibility of selective inclusion of materials; for example, metal, metal oxides, and dielectrics may afford a direct means of generating material patterns.…”

Enabling future nanomanufacturing through block copolymer self-assembly: A review

“…[18], [19] A key enabler for future BCP applications in thin film form has emanated from "directed self-assembly" (DSA) research. [20], [21], [22], [23], [24], [25] The thrust of DSA research over the past decade advanced our understanding to control BCP thin films and extensive DSA reviews are available for interested readers. [26], [27] The most basic type of BCP is a linear A-B di-BCP (containing two polymer blocks only), as shown in Fig.…”

Investigation of Micro-phase Separation of A Novel Block Copolymer Polystyrene-b-Polytrimethylene Carbonate (PS-<i>b</i>-PTMC)

“…Block copolymers (BCPs), with covalently bonded but distinctive blocks, are versatile nanomaterials because they can self-assemble into periodic two-or three-dimensional morphologies with feature sizes ranging from 3 to 50 nm in recent years. The self-assembly patterning of block copolymer has aroused considerable attention because of their wide applications in many fields of nanoscience and nanofabrication, including biomolecule detection [1], nanochannels for nanofluidic fabrication [2], advanced IC devices [3,4], nanostructure fabrication [5,6], and as a nanoimprint template to create nanopillars [7,8]. These potential applications have driven extensive efforts in both academy and industry to apply the technique to achieve precisely controlled geometry size, aligned and ordered arrays to meet the stringent requirement for many emerging applications especially in semiconductor IC manufacture and other nanostructures or devices fabrication.…”