Self-assembled patches in PtSi/n-Si (111) diodes

Abstract

Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (NDapp), the potential difference between the Fermi energy level and the bottom of the conduction band (Vn), apparent barrier height (ΦBapp), series resistance (Rs) and the interface state density Nss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

INVESTIGATION OF THE ROLE OF METAL IN NON-ALLOY METAL-SEMICONDUCTOR (Si) CONTACT

“…On the other hand, there are deformed hexagonal voids in this direction of silicon. This, in turn, can affect the parameters of the metalsemiconductor contact-based device (for example, the presence of load-carrying mechanisms) (Sze, 1980;Askerov, 2017;Afandiyeva et al, 2018).…”

“…Another source of MSC homogenity is peripheral homogenity and homogenity resulting from physico-chemical processes occurring at the border of touch. In this regard, the study of the effect of various technological and design facts on the electrophysical properties of SD is of great scientific and practical importance (Afandiyeva et al, 2018;Khannaa et al, 2011;Cheng & Wang, 2009).…”

Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

“…From the above it follows that Ф B is a necessary, but insufficient parameter for the description of the emission properties of interfaces [12,13] . To compare the results of different authors [14][15][16] , it is necessary to take into account the experimental values of the Richardson constant A.…”

Investigating the optoelectronic properties of NiOEP/n-Si heterojunctions for solar cell applications

“…This is due to the combination of electrons and holes in the junction area. The values of diode parameters of NiOEP/n-Si HJSC and other examples of related heterojunctions [9,[31][32][33] were summarized in table 1. It is clear from the table that NiOEP/n-Si HJSC has a diode quality factor close to one and shows better performance, which makes it qualified to work as a solar cell.…”