Self-assembled ZnO1−S  nanorod arrays with varied luminescent and electronic properties

Zhang, Lei; Fan, Lixia; Panin, G. N.; Kang, Tae Won; Zheng, Kun

doi:10.1016/j.matlet.2015.02.052

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…Controlling the distribution of ZnO nanoparticles on graphene with highly controllable particle size allows for creating highly scalable nanosized G/GO heterojunctions for ultra-high-density memory (up to 10 12 cm −2 or 1Tb on a chip for the vertical geometry of crossing electrodes, supporting information S2, figure S1). Furthermore, for the upper electrode Van der Waals-like nanorod contact at room temperature [17] or the ZnO nanorods grown from ZnO nanoparticles at low temperature [15,32] and for the lower electrode to the graphene oxide, the lower well-conductive matrix graphene layer allows one to create an ultra-high density of low-energy consumption photomeristors on a large-scale flexible polymer substrate. Operating voltage of the device can be significantly reduced by decreasing the size of a single memory cell in which graphene reading electrodes may be stationed at a distance of several nanometers from each other.…”

Section: Discussionmentioning

confidence: 99%

Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation

et al. 2017

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Photocatalytic oxidation of graphene with ZnO nanoparticles was found to create self-assembled graphene oxide/graphene (G/GO) photosensitive heterostructures, which can be used as memristors. Oxygen groups released during photodecomposition of water molecules on the nanoparticles under ultraviolet light, oxidized graphene, locally forming the G/GO heterojunctions with ultra-high density. The G/GO nanostructures have non-linear current-voltage characteristics and switch the resistance in the dark and under white light, providing four resistive states at room temperature. Photocatalytic oxidation of graphene with ZnO nanoparticles is proposed as an effective method for creating two-dimensional memristors with a photoresistive switching for ultra-high capacity non-volatile memory.

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Section: Discussionmentioning

confidence: 99%

Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation

et al. 2017

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“…One might also suggest other synthesis methods employed in ZnO/ZnS compounds, such as, e.g. precipitation (Skinner & Barton, 1960), mechanochemistry (Patil et al, 2010;Daiko et al, 2017), molecular beam epitaxy (Homm et al, 2010;He et al, 2012), sol-gel synthesis (Raleaooa et al, 2017;Baranowska-Korczyc et al, 2017), atomic layer deposition (Ö zgü r et al, 2005;Logar et al, 2009), or the hydrothermal method (Zhang et al, 2015). Finally, a synthesis employing one of the methods used in related AB compounds (Morkoç et al, 1994;Andrievski, 2009;Wang et al, 2008) could be attempted; in particular, recent experiments show that it is possible to control the polytypes of GeH, a representative two-dimensional material (Cultrara et al, 2018), which suggests a possible use of polytypes in the synthesis process of the ZnO/ ZnS heterostructures and heterojunctions (Wang et al, 2002;Yan & Xue, 2006;Hu et al, 2011;Jia et al, 2013;Sadollahkhani et al, 2014;Daiko et al, 2017;Giri et al, 2014;Tarish et al, 2017;Lu et al, 2009;Tian et al, 2014;Zhu et al, 2008;Chen et al, 2010;Xitao et al, 2014).…”

Section: Structural Chemistry and Possible Synthesis Routesmentioning

confidence: 99%

ZnO/ZnS (hetero)structures: ab initio investigations of polytypic behavior of mixed ZnO and ZnS compounds

Zagorac

Schön

et al. 2018

Acta Crystallogr B Struct Sci Cryst Eng Mater

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The range of feasible ZnO/ZnS polytypes has been explored, predicting alternative structural arrangements compared with previously suggested or observed structural forms of ZnO/ZnS compounds, including bulk crystal structures, various nanostructures, heterostructures and heterojunctions. All calculations were performed ab initio using density functional theory–local density approximation and hybrid Heyd–Scuseria–Ernzerhof functionals. Specifically, pure ZnO and ZnS compounds and mixed ZnO1–x S x compounds (x = 0.20, 0.25, 0.33, 0.50, 0.60, 0.66 and 0.75) are investigated and a multitude of possible stable polytypes for ZnO/ZnS compounds creating new possibilities for synthesis of new materials with improved physical and chemical properties are identified.

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Semiconductor Solid‐Solution Nanostructures: Synthesis, Property Tailoring, and Applications

Liu

Yang

et al. 2017

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The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.

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Self-assembled ZnO1−S nanorod arrays with varied luminescent and electronic properties

Cited by 5 publications

References 15 publications

Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation

Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation

ZnO/ZnS (hetero)structures: ab initio investigations of polytypic behavior of mixed ZnO and ZnS compounds

Semiconductor Solid‐Solution Nanostructures: Synthesis, Property Tailoring, and Applications

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