Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Bencher, Chris; Smith, Jeffrey; Miao, Liyan; Cai, Cathy; Chen, Yongmei; Cheng, Joy Y.; Sanders, Daniel P.; Tjio, Melia; Truong, Hoa D.; Holmes, Steven J.; Hinsberg, William D.

doi:10.1117/12.881293

Cited by 89 publications

(59 citation statements)

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“…It will become very interesting to compare these predictions to experimentally derived defect densities when the experimental values become available from meticulous fullwafer studies. (We note that our calculated values are in reasonable agreement -within one order of magnitude --with preliminary measurements of Bencher et al [35] who estimated the density of DSA defects for 3X chemoepitaxy of 12 nm halfpitch PS-PMMA at 25 defects/cm 2 or less). These results provide some guidance to the "ideal" behavior of block copolymers in the case of chemoepitaxy.…”

Section: Line Multiplicationsupporting

confidence: 79%

Modeling Chemoepitaxy of Block Copolymer Thin Films using Self-Consistent Field Theory

Ginzburg

Weinhold

Hustad³

et al. 2013

J. Photopol. Sci. Technol.

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Directed self-assembly (DSA) of block copolymers (BCPs) is a promising technology for advanced patterning at future technology nodes. We use Self-Consistent Field Theory (SCFT) to model directed self-assembly (DSA) of PS-PMMA block copolymers on chemically patterned surfaces (chemoepitaxy). We consider the scenario in which the surface is covered by a neutral brush, in which PS-preferential guiding lines are written. The lines have width W and the period of the line pattern is denoted as P. After the DSA process, one expects to see a lamellar pattern with period (P/n), where n is the line multiplication factor. Using SCFT, we investigate the stability of the templated lamellar pattern as a function of (P/L 0 ) and (W/L 0 ), where L 0 is the bulk lamellar period. We find that the pattern is most stable if the guiding stripe pattern has a width which is slightly larger than the equilibrium lamellar half-period, and roughly corresponds to (W/L 0 ) = 0.5--0.6, in agreement with earlier studies. The stability of the pattern also depends on the multiplication factor, n; as n is increased, the free energy differences between various morphologies diminish, making the formation of defects more likely. This has significant impact on the practicality of chemoepitaxy for sub-30 nm line and space applications.

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Section: Line Multiplicationsupporting

confidence: 79%

Modeling Chemoepitaxy of Block Copolymer Thin Films using Self-Consistent Field Theory

Ginzburg

Weinhold

Hustad³

et al. 2013

J. Photopol. Sci. Technol.

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“…It utilizes a three-layer hardmask stack which multiplies the pattern present in a thin photo-resist into a thick organic hardmask. 15 Recently, such stacks have been used to transfer self-assembled block copolymer patterns into a substrate using 10 nm thick SiN hardmasks. 15,16 In the case of t-SPL we addressed the pattern transfer issue by using a similar three-layer stack consisting of a polymer transfer layer covered by a sputter deposited 4 nm silicon-oxide hard mask and the actual imaging resist.…”

Section: Introductionmentioning

confidence: 99%

Sub-20 nm silicon patterning and metal lift-off using thermal scanning probe lithography

Wolf

Rawlings

Mensch

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The most direct definition of a patterning process' resolution is the smallest half-pitch feature it is capable of transferring onto the substrate. Here we demonstrate that thermal Scanning Probe Lithography (t-SPL) is capable of fabricating dense line patterns in silicon and metal lift-off features at sub 20 nm feature size. The dense silicon lines were written at a half pitch of 18.3 nm to a depth of 5 nm into a 9 nm polyphthalaldehyde thermal imaging layer by t-SPL. For processing we used a three-layer stack comprising an evaporated SiO 2 hardmask which is just 2-3 nm thick. The hardmask is used to amplify the pattern into a 50 nm thick polymeric transfer layer. The transfer layer subsequently serves as an etch mask for transfer into silicon to a depth of ≈ 65 nm. The line edge roughness (3 σ) was evaluated to be less than 3 nm both in the transfer layer and in silicon. We also demonstrate that a similar three-layer stack can be used for metal lift-off of high resolution patterns. A device application is demonstrated by fabricating 50 nm half pitch dense nickel contacts to an InAs nanowire.

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“…PS-PMMA has several advantages as the DSA material; the etching selectivity of PS and PMMA is high for an organic BCP material, and the relatively low segregation energy enables perpendicular orientation of lamellar structure in a normal ambience without any special atmosphere or top coat. 9,15 However, to obtain a sub-10 nm feature pattern by DSA, new materials with a high χ parameter are required. Figure 1 shows the chemical structure of the BCPs utilized in this work.…”

Section: Performance Of Si-containing Bcp Materialsmentioning

confidence: 99%

“…Applying polystyrene-polymethylmethacrylate (PS-b-PMMA) diblock copolymer in a full-pitch size of around 25 nm, such a defect investigation has been reported. 9 On the other hand, the domain size of self-organization is basically determined by the Flory-Huggins χ parameter and the polymerization index. 10,11 To realize sub-10 nm feature size patterns, a higher χ parameter diblock copolymer is required.…”

Section: Introductionmentioning

confidence: 99%

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

Kihara¹,

Seino²,

Sato³

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The perpendicularly orientated lamellar structure of the self-organized diblock copolymer is an attractive template for sub-10-nm line-and-space pattern formation. We propose a method of evaluating the neutral layer (NL) whose performance has an important bearing on the perpendicular orientation of the lamellar structure. The random copolymer of methyl methacrylate and i-butyl POSS methacrylate (MAIBPOSS) has been investigated as an NL for a polymethylmethacrylate-b-polymethacrylethylPOSS (PMMA-b-PMAIBPOSS) lamellar structure. PMMA-b-PMAIBPOSS material has the potential to form sub-10 nm line-and-space pattern, in addition to high etch selectivity due to its POSS structure. Under the free surface, PMMA-b-PMAIBPOSS film on the random copolymer layer showed horizontal orientation. However, a half-pitch of a 7-nm finger pattern structure was observed by peeling off the horizontally oriented layer. The upper portion of the PMMA-b-PMAIBPOSS film was eliminated till proximity of the random copolymer layer by CF 4 gas etching. From the result, it was revealed that the PMMA-r-PMAIBPOSS works as an NL. It was confirmed that the contact angle analysis using an appropriate polymer is a suitable method for evaluation of the surface energy performance of the copolymer with the attribute of high segregation energy.

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Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Cited by 89 publications

References 0 publications

Modeling Chemoepitaxy of Block Copolymer Thin Films using Self-Consistent Field Theory

Modeling Chemoepitaxy of Block Copolymer Thin Films using Self-Consistent Field Theory

Sub-20 nm silicon patterning and metal lift-off using thermal scanning probe lithography

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

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