2008
DOI: 10.1088/0953-8984/20/04/045208
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Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements

Abstract: View the article online for updates and enhancements. Related content Scattering analysis of 2DEG extracted by QMSA in undoped Al0.25Ga0.75N/GaN S B Lisesivdin, S Acar, M Kasap et al.-Growth parameter investigation of AlGaN/GaN/AlN's with Hall measurements S B Lisesivdin, S Demirezen, M D Caliskan et al.-Electronic transport in n-and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantumwells Y Sun, N Balkan, M Aslan et al.-Recent citations Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN he… Show more

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