2019
DOI: 10.1016/j.ijhydene.2019.07.096
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Self-generating CeVO4 as conductive channel within CeO2/CeVO4/V2O5 to induce Z-scheme-charge-transfer driven photocatalytic degradation coupled with hydrogen production

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Cited by 41 publications
(10 citation statements)
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“…CeVO 4 was chosen as a sensitizer semiconductor due to its narrow band gap energy and matched band position and close lattice spacing with CeO 2 . 27 What is more, in our present study, the crystalline structures of CeVO 4 and CeO 2 were transformed by calcination without an additional structure-directing agent, leading to enhanced interaction in the interface and formation of rich defects due to slight lattice mismatch, which resulted in the high-efficient separation and migration of photogenerated electrons. The type-II heterojunction nanocomposites as supports for Co nanoparticles (NPs) exhibited the enhanced 020), (112), and (132) planes of tetragonal CeVO 4 (JCPDS No.…”
Section: Resultsmentioning
confidence: 55%
See 1 more Smart Citation
“…CeVO 4 was chosen as a sensitizer semiconductor due to its narrow band gap energy and matched band position and close lattice spacing with CeO 2 . 27 What is more, in our present study, the crystalline structures of CeVO 4 and CeO 2 were transformed by calcination without an additional structure-directing agent, leading to enhanced interaction in the interface and formation of rich defects due to slight lattice mismatch, which resulted in the high-efficient separation and migration of photogenerated electrons. The type-II heterojunction nanocomposites as supports for Co nanoparticles (NPs) exhibited the enhanced 020), (112), and (132) planes of tetragonal CeVO 4 (JCPDS No.…”
Section: Resultsmentioning
confidence: 55%
“…Engineering heterojunctions with other semiconductors has been considered as one of the most promising ways to solve these issues. CeVO 4 was chosen as a sensitizer semiconductor due to its narrow band gap energy and matched band position and close lattice spacing with CeO 2 . What is more, in our present study, the crystalline structures of CeVO 4 and CeO 2 were transformed by calcination without an additional structure-directing agent, leading to enhanced interaction in the interface and formation of rich defects due to slight lattice mismatch, which resulted in the high-efficient separation and migration of photogenerated electrons.…”
Section: Resultsmentioning
confidence: 82%
“…The reasons are mainly as follows: on the one hand, it has a narrow band gap, leading to broad spectral absorption. 25 On the other hand, there are two kinds of variable valence elements, Ce and V, on its surface, resulting in an easily regulated surface electronic structure. Additionally, PDA was chosen as a sensitizer semiconductor due to the absorption in the near-infrared (NIR) region.…”
Section: Resultsmentioning
confidence: 99%
“…Among the various materials, CeVO 4 was selected as the nanoreactor to prepare and support Co nanosheets for catalyzing H 2 evolution from aqueous NH 3 BH 3 solution. The reasons are mainly as follows: on the one hand, it has a narrow band gap, leading to broad spectral absorption . On the other hand, there are two kinds of variable valence elements, Ce and V, on its surface, resulting in an easily regulated surface electronic structure.…”
Section: Results and Discussionmentioning
confidence: 99%
“…[ 124 ] CeO 2 /CeVO 4 /V 2 O 5 was prepared to induce Z‐scheme‐charge‐transfer and drive photocatalytic degradation coupled with H 2 generation. [ 125 ] The CeVO 4 nanoparticles function as a conductive channel to transfer photogenerated carriers, as redox centers to facilitate the transfer of photogenerated electrons and enhance the separation efficiency of electron–hole pair. Graphitic carbon nitride (g‐C 3 N 4 ) was considered as a promising candidate material for photocatalyst due to its medium bandgap (≈2.7 eV) and excellent photocatalytic stability.…”
Section: Ceo2‐based Photocatalystmentioning
confidence: 99%