Self-Interstitials in Silicon Irradiated with Light Ions

Mukashev, B.N.; Абдуллин, Х.А.; Gorelkinskii, Yu.V.

doi:10.1002/(sici)1521-396x(199807)168:1<73::aid-pssa73>3.0.co;2-5

Cited by 22 publications

(7 citation statements)

References 15 publications

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“…3,4,5 The results of two quantum Monte Carlo calculations are consistent with these three defects having low energies. 3,6 Mukashev et al 7 attributed the AA12 electron paramagnetic resonance center to a self-interstitial defect, possibly a single self-interstitial. Calculations by Eberlein et al 8 found the doubly-positively-charged single selfinterstitial to be stable at the tetrahedral site, and that it was broadly consistent with the AA12 defect.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen/silicon complexes in silicon from computational searches

2008

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Defects in crystalline silicon consisting of a silicon self-interstitial atom and one, two, three, or four hydrogen atoms are studied within density-functional theory (DFT). We search for low-energy defects by starting from an ensemble of structures in which the atomic positions in the defect region have been randomized. We then relax each structure to a minimum in the energy. We find a new defect consisting of a self-interstitial and one hydrogen atom (denoted by {I,H}) which has a higher symmetry and a lower energy than previously reported structures. We recover the {I,H_2} defect found in previous studies and confirm that it is the most stable such defect. Our best {I,H_3} defect has a slightly different structure and lower energy than the one previously reported, and our lowest energy {I,H_4} defect is different to those of previous studies.Comment: 7 pages, 8 figure

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Section: Introductionmentioning

confidence: 99%

“…Formation energies per H atom as defined by Eq (7). and degeneracies per atomic site, d i , for various hydrogen/silicon self-interstitial complexes.…”

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confidence: 99%

Hydrogen/silicon complexes in silicon from computational searches

2008

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“…Corbett and Karins [2] summarized in 1981 the status of our knowledge of ion-induced defects in semiconductors and included a summary of EPR measurements. Since then there have been further EPR studies such as those by Glaser et al [3], Waddell et al [4], Yajima et al [5], Sealy et al [6][7][8], Dvurechenskii et al [9], Varichenko et al [10], Mukashev et al [11], Abdullin et al [12], Poirier et al [13] and O'Raifeartaigh et al [14].…”

Section: Introductionmentioning

confidence: 99%

Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon

Barklie

O'Raifeartaigh

2005

J. Phys.: Condens. Matter

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Many of the defects created by ion implantation into silicon can be detected by electron paramagnetic resonance (EPR). The main defects observed are isolated point defects such as Si-P3 centres (neutral 4-vacancies),silicon dangling bonds in amorphous silicon and defects associated with the so-called resonance-a single broad anisotropic line; particular attention is paid to the latter defects as they have the highest population over a wide fluence range. This paper reports the effects on the nature and population of these defects of changing the fluence, mass and energy of the implanted ions as well as the effects of changing the implantation temperature.

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“…A major difference with the vacancy is that the self-interstitial has so far never been caught experimentally allowing an easy determination of its electronic structure, level positions and ordering, and diffusion mechanism. We may, however, cite recent attempts to identify the self-interstitial by Mukashev et al (1998) and Gorelkinskii et al (2009). These investigations are still leading to controversial conclusions.…”

Section: The Self-interstitialmentioning

confidence: 99%