Self-organization of nanoneedles in Fe∕GaAs (001) epitaxial thin film

Huang, Yizhong; Wang, S. G.; Wang, C.; Xie, Zhibin; Cockayne, D. J. H.; Ward, R. C. C.

doi:10.1063/1.2182017

Cited by 14 publications

(28 citation statements)

References 11 publications

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“…In the present work, we introduce a simple way to grow ZnO nanorods on top of ordered Si nanoneedles, forming a perfect array of ZnO/Si nano‐heterojunctions with controllable shape and size. The ordered Si nanoneedle array was first fabricated on the surface of a Si substrate coated with thin layer of ZnO with a thickness of approximately 50 nm using the method that we developed previously and described in detail in the literature . Subsequently, the growth of ZnO nanorods was carried out through a hydrothermal approach, in which zinic nitrate hexhydrate (Zn(NO 3 ) 2 ·6H 2 O) and hexamethylenetetramine (HMTA) were used as reactants .…”

Section: Introductionmentioning

confidence: 99%

Towards Perfectly Ordered Novel ZnO/Si Nano‐Heterojunction Arrays

Yadian

Wei

et al. 2013

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The fabrication of a highly ordered novel ZnO/Si nano-heterojuntion array is introduced. ZnO seed layer is first deposited on the Si (P<111>) surface. The nucleation sites are then defined by patterning the surface through focused ion beam (FIB) system. The ZnO nanorods are grown on the nucleation sites through hydrothermal process. The whole fabrication process is simple, facile and offers direct control of the space, length and aspect ratio of the array. It is found that ZnO/Si nanojunctions show an improved interface when subjected to heat treatment. The recrystallization of ZnO and the tensile lattice strain of Si developed during the heating process contribute the enhancement of their photoresponses to white light. The photoluminescence (PL) measurement result of nano-heterojunction arrays with different parameters is discussed.

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Section: Introductionmentioning

confidence: 99%

Towards Perfectly Ordered Novel ZnO/Si Nano‐Heterojunction Arrays

Yadian

Wei

et al. 2013

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“…The much lower sputter yield at the center relative to the edges, and the fast surface diffusion flow rate with high sticking coefficient of Fe (responsible for the surface smoothing), together lead to the formation of the nanonipple structure with a high aspect ratio 17, 18. Thus, it is a self‐organization process driven by the ion beam, which is essentially a consequence of the competition of the surface roughening and smoothening processes 19–21…”

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confidence: 99%

“…The detailed structures of the nanonipples were examined using transmission electron microscopy (TEM). Figure a shows a bright‐field TEM image of one of the nanonipples from a thin foil, which was prepared using a lift‐out technique in a focused ion beam (FIB) system 21, 22. It consists of a Si nanoneedle covered by a featureless layer and a nanodot tip on its top.…”

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Self‐Organization of a Hybrid Nanostructure consisting of a Nanoneedle and Nanodot

Wang³

et al. 2012

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“…This selforganization was attributed to preferential milling, alloying, and defect/dislocation formation and resulted in 20-nm-wide Sb and GaSb wires and In nanoparticles. [60][61][62] …”

Section: Ion Beam Lithographymentioning

confidence: 99%

Focused Ion Beam Micro- and Nanoengineering

Langford¹,

Nellen²,

Giérak³

et al. 2007

MRS Bull.

104

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This article is divided into four sections. The first section discusses FIB micro-and nanomilling and covers aspects such as pattern densities and milling threedimensional (3D) shapes. The second section covers FIB lithography, that is, Ga implantation or milling followed by a pattern transfer or growth step. The third section discusses FIB implantation for patterning and device fabrication. The fourth section highlights other fabrication techniques such as in situ micromanipulation. The article concludes with a discussion of possible future developments for enhancing the nanofabrication capabilities of FIB systems. FIB Micro-and NanomillingFIB milling, whether for sample preparation for electron microscopy or direct maskless patterning, is the most commonly used application of the systems and has been used to prepare a range of devices including lenses on the ends of fibers, 6 pseudo spin valves, 7 pillar microcavities, 8 and stacked Josephson junctions. 9 The smallest ion beam spot size is approximately 5-10 nm, which enables correspondingly small features to be patterned. The shape of an FIB cut is dependent on many factors, such as its geometry, milled depth, ion beam profile, and the redeposition of sputtered material. (Other factors, such as self-focusing, are discussed in the section "Micromachining 3D Structures with Complicated Shapes"). The combination of ion beam profile effects and sputter yield changes with the FIB angle of incidence causes rounding of the top edges of an FIB cut and the sidewalls to be inclined a few degrees from the perpendicular (the exact angles depend on the ion beam profile and milled depth). Redeposition may also cause the sidewalls to incline.As the milling depth increases, the probability of the sputtered material redepositing onto the sidewalls increases. If a line or hole is milled 10 to 15 times deeper than its width, redeposition results in V-shaped cross sections. The aspect ratio (depth to width) can be improved by using gas-enhanced etching (see the article by MoberlyChan et al. in this issue). Because the shape of a cut is dependent on the milled depth, the milling is referred to as 2D patterning if the sputtered depth is <100 nm, and 3D micromachining if the sputtered depth is >100 nm. FIB 2D PatterningFIB 2D patterning is used to pattern a diverse range of materials into dots, lines, and arrays. The 2D pattern densities MRS BULLETIN • VOLUME 32 • MAY 2007 • www/mrs.org/bulletin 417 AbstractThis article discusses applications of focused ion beam micro-and nanofabrication. Emphasis is placed on illustrating the versatility of focused ion beam and dual-platform systems and how they complement conventional processing techniques. The article is divided into four parts: maskless milling, ion beam lithography, ion implantation, and techniques such as in situ micromanipulation.

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Self-organization of nanoneedles in Fe∕GaAs (001) epitaxial thin film

Cited by 14 publications

References 11 publications

Towards Perfectly Ordered Novel ZnO/Si Nano‐Heterojunction Arrays

Towards Perfectly Ordered Novel ZnO/Si Nano‐Heterojunction Arrays

Self‐Organization of a Hybrid Nanostructure consisting of a Nanoneedle and Nanodot

Focused Ion Beam Micro- and Nanoengineering

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