Self-powered spectrum-selective photodetectors fabricated from n-ZnO/p-NiO core–shell nanowire arrays

Ni, Pengpeng; Shan, Chongxin; Wang, Shuangpeng; Liu, Xingyu; Shen, Dezhen

doi:10.1039/c3tc30525b

Cited by 141 publications

(93 citation statements)

References 40 publications

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“…[25][26][27][28][29][30] This responsivity value corresponds to an external quantum efficiency (EQE) of about 65% if the internal photoconductive gain is assumed to be one. 31 The high responsivity achieved in the ZnO/ZnS core/shell nanowire array device can mainly be attributed to the abrupt nature of the interface between ZnO and ZnS, which effectively inhibits carrier recombination and facilitates an efficient carrier separation.…”

Section: Resultsmentioning

confidence: 99%

“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 The responsivity for UV (385 nm) excitation source, denoted as R 385nm, with a 0.04 mW/cm 2 illumination density was found to be 0.2 A/W, which is similar to a single crystal ZnS nanobelt UV sensor, 24 and is orders of magnitude higher than similar photodetectors fabricated with a 3D array of nanowires. [25][26][27][28][29][30] This responsivity value corresponds to an external quantum efficiency (EQE) of about 65% if the internal photoconductive gain is assumed to be one. 31 The high responsivity achieved in the ZnO/ZnS core/shell nanowire array device can mainly be attributed to the abrupt nature of the interface between ZnO and ZnS, which effectively inhibits carrier recombination and facilitates an efficient carrier separation.…”

Section: Resultsmentioning

confidence: 99%

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Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

et al. 2015

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A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

et al. 2015

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“…The calculated responsivity of a CdSe/ZnTe core/shell photodetector under 0.3 mW cm −2 of blue excitation ( λ = 465) is 1.6 mA W −1 , which is comparable with other heterojunction photodetectors. [39][40][41] The decrease in responsivity at higher illumination densities can be attributed to hole-trapping saturation and a transparent Schottky barrier at higher illumination densities. …”

Section: Cdse/znte Core/shell Nanowire Array Photodetector Under Bluementioning

confidence: 97%

Enhanced Broad Band Photodetection through Piezo‐Phototronic Effect in CdSe/ZnTe Core/Shell Nanowire Array

Satish

Wang

Chen

et al. 2015

Adv Elect Materials

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The piezo‐phototronic effect is of immense importance for improving the performance of optoelectronic nanodevices. This is accomplished by tuning the charge carrier generation, separation, and transport under the influence of the inner piezopotential. In this paper, a broad band photodetector is demonstrated that is based on II‐VI binary CdSe/ZnTe core/shell nanowire arrays, in which photodetection is greatly enhanced by the piezo‐phototronic effect. The photodetector performance under UV (385 nm), blue (465 nm), and green (520 nm) illumination infers a saturation free response with an intensity variation near two orders of magnitude, where the peak photocurrent (125 μA) is two orders higher at 0.25 kilogram force (kgf) compared to no load (0.71 μA). The resulting (%) responsivity changed by four orders of magnitude. The significant increase in responsivity is believed to arise from: 1) the piezo‐phototronic effect induced by a change in the Schottky barrier height at the Ag–ZnTe junction, and in the type‐II band alignment at the CdSe–ZnTe interfaces, in conjugation with 2) a small lattice mismatch between the CdSe and ZnTe epitaxial layers, which lead to reduced charge carrier recombination. This work thus extends the piezo‐phototronic effect to a group II‐VI binary semiconductor heterostructure and demonstrates the importance of the epitaxial interface in a core/shell nanowire photodetector.

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“…However, the stable and controllable p-type ZnO is difficult to obtain due to the low dopant solubility, the deep acceptor level and the ''self-compensation'' of shallow acceptors resulting from native donor defects. Therefore, different other p-type semiconductors, such as Si, NiO and polymer [7][8][9][10][11] have been chosen to fabricate the pn heterojunction UV photodetectors. Some groups have investigated ZnO photoconductors based on films and nanostructure.…”

Section: Introductionmentioning

confidence: 99%

High-performance UV photodetectors and temperature-dependent photoluminescence of individual ZnO hexagonal-prism microwire

Ding

Zhao

et al. 2014

Appl. Phys. A

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ZnO hexagonal-prism microwires (HPMs) with the average width of about 50 lm have been fabricated by a floating zone method. Their structural, temperaturedependent photoluminescence (PL) and UV photoresponse based on an individual ZnO HPMs were systematically investigated. For the temperature-dependent PL properties, different transitions including free exciton emission, bound exciton emission and free-to-bound transition were clearly observed at 83 K. The individual ZnO HPM-based UV photodetector showed a response cut-off wavelength of 390 nm and an ultraviolet/visible ratio of about two orders of magnitude with an applied bias of 5 V.

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Self-powered spectrum-selective photodetectors fabricated from n-ZnO/p-NiO core–shell nanowire arrays

Cited by 141 publications

References 40 publications

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Enhanced Broad Band Photodetection through Piezo‐Phototronic Effect in CdSe/ZnTe Core/Shell Nanowire Array

High-performance UV photodetectors and temperature-dependent photoluminescence of individual ZnO hexagonal-prism microwire

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