Self-rolling and light-trapping in flexible quantum well–embedded nanomembranes for wide-angle infrared photodetectors

Wang, Han; Zhen, Honglou; Li, Shilong; Jing, Youliang; Huang, Gaoshan; Mei, Yongfeng; Lü, Wei

doi:10.1126/sciadv.1600027

Cited by 68 publications

(87 citation statements)

References 38 publications

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“…S-RuM structures as an emerging self-assembled 3D architecture platform through 2D processing, have already been well understood in their formation mechanism at all scales [33,34] and used for a wide range of applications, including in passive electronics, [6,7,[11][12][13] optical measurement and sensing, [15][16][17][18]35,36] and biological cell growth. With the additions of perforation, thermal resistance increased dramatically.…”

mentioning

confidence: 99%

Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures

Michaels

Wood

Froeter

et al. 2019

Adv Materials Inter

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Strain‐induced self‐rolled‐up membranes (S‐RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S‐RuM structures. A programmable fuse with well‐defined thermal threshold, ultrasmall footprint, and 2–3 V voltage rating is demonstrated, which can potentially serve as an on‐chip sensing device for power electronic circuits.

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mentioning

confidence: 99%

Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures

Michaels

Wood

Froeter

et al. 2019

Adv Materials Inter

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“…This property should also enhance the coupling of the evanescent field between the graphene layer and tubular structure, which could alleviate the problem of a low signal‐to‐noise ratio, thus inspiring novel constructions for potential applications of graphene‐based optical devices . Moreover, rolling technique could offer an approach to the 3D configuration of graphene and other 2D materials for the controllable on‐chip strain engineering and boosted phonon–photon interaction that lab‐in‐a‐tube systems rely on, which include a wide range of functionalities such as optical microcavities, photodetectors, actuators, and micromotors …”

Section: Introductionmentioning

confidence: 99%

On‐Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon–Phonon Interaction in Graphene

Wang

Tian

Zhang

et al. 2019

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specific surface area. [1,2] The nontrivial band structure of graphene near the Fermi level enables a series of appealing phenomena, e.g., the anomalous quantum Hall effect, [3] ultrahigh electron mobility, [4] and superior thermal conductivity, [5] rendering it a promising candidate for the next generation of micro/nanoelectronic devices. With respect to its current status and future perspectives, it is of great significance to fully explore the tunability of the properties of graphene by various methods, e.g., doping, [6] gating, [7] and strain engineering. [8,9] Among these approaches, strain engineering is capable of altering the lattice symmetry of graphene, thus tuning its electronic band structure, [10,11] which could be superior in the bandgap opening, [12] conductance modulation, [13,14] and the formation of strong magnetic field. [15] For a realistic graphene-integrated optoelectronic device in an on-chip manner, such as optical modulators, [16] silicongraphene photodetectors, [17,18] and broadband polarizer, [19] strain engineering is desired in order to provide a flexible approach for tuning the electrical structure of graphene. However, developed strain-tuning methods, such as the deformation of flexible substrates, [20,21] piezoelectric substrate actuation, [22] and pressurized blisters, [23] are hardly compatible with onchip applications. Particularly, using the rolling method as a reliable approach for both optimal yields and effective strain manipulation [24][25][26] suggests direct and precise tuning with target morphologies and thus their mechanical properties. [27] Based on rolling geometry, the corresponding strain states in graphene can be designed and accurately realized, as summarized in Figure 1, where the tensile strain in graphene could be introduced through the transfer process of graphene onto conventional semiconductors. [28,29] However, compressive strain in graphene is seldom reported because the critical compressive strain for buckling is several orders of magnitude smaller than the critical tensile strain for fracturing. [30] Furthermore, for a few compressive strain cases, it is essential to explore the fundamental physics of out-of-plane deformation, which often occurs during the compression process.On the other hand, the innovative 3D architecture based on 2D graphene and graphene oxide enables morphologyengineered performance, such as strong mechanical properties, On-chip strain engineering is highly demanded in 2D materials as an effective route for tuning their extraordinary properties and integrating consistent functionalities toward various applications. Herein, rolling technique is proposed for strain engineering in monolayer graphene grown on a germanium substrate, where compressive or tensile strain could be acquired, depending on the designed layer stressors. Unusual compressive strains up to 0.30% are achieved in the rolled-up graphene tubular structures. The subsequent phonon hardening under compressive loading is observed through straininduced Raman G band splittin...

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“…Recent technological developments in nonplanar 3D electronics, including image sensors, display devices, antennas, energy devices, and other devices, have enriched omnidirectional and ubiquitous communication capabilities, helping realize a hyperconnected society. There are three primary approaches to generate 3D electronics.…”

Section: Introductionmentioning

confidence: 99%

“…This method achieves high performance owing to the use of commercially available electronic components; however, the adjustment of geometric designs is still restricted because planar chip‐type device modules are essentially nondeformable. The third approach involves fabricating membrane‐type electronic devices followed by 3D transformation, which we call the “indirect” method. This method enables 3D transformation of a device layer with high electrical performance and has fewer restrictions than the semi‐indirect method because most silicon technology is still accessible for fabricating the flexible membrane‐type device layer.…”

Section: Introductionmentioning

confidence: 99%

Automatic Transformation of Membrane‐Type Electronic Devices into Complex 3D Structures via Extrusion Shear Printing and Thermal Relaxation of Acrylonitrile–Butadiene–Styrene Frameworks

Jang

Yoo

Kang

et al. 2019

Adv Funct Materials

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This work demonstrates a means of automatic transformation from planar electronic devices to desirable 3D forms. The method uses a spatially designed thermoplastic framework created via extrusion shear printing of acrylonitrile-butadiene-styrene (ABS) on a stress-free ABS film, which can be laminated to a membrane-type electronic device layer. Thermal annealing above the glass transition temperature allows stress relaxation in the printed polymer chains, resulting in an overall shape transformation of the framework. In addition, the significant reduction in the Young's modulus and the ability of the polymer chains to reflow in the rubbery state release the stress concentration in the electronic device layer, which can be positioned outside the neutral mechanical plane. Electrical analyses and mechanical simulations of a membrane-type Au electrode and indium gallium zinc oxide transistor arrays before and after transformation confirm the versatility of this method for developing 3D electronic devices based on planar forms.

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Self-rolling and light-trapping in flexible quantum well–embedded nanomembranes for wide-angle infrared photodetectors

Abstract: Flexible semiconductor nanomembranes bend into microscale scroll architectures for wide-angle infrared photodetection.

Cited by 68 publications

References 38 publications

Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures

Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures

On‐Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon–Phonon Interaction in Graphene

Automatic Transformation of Membrane‐Type Electronic Devices into Complex 3D Structures via Extrusion Shear Printing and Thermal Relaxation of Acrylonitrile–Butadiene–Styrene Frameworks

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