Semiclassical Monte Carlo model for in-plane transport of spin-polarized electrons in III–V heterostructures

Saikin, Semion K.; Shen, Min; Cheng, Ming‐C.; Privman, Vladimir

doi:10.1063/1.1589581

Cited by 72 publications

(79 citation statements)

References 74 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Transient dynamics of spin drift and diffusion was considered by Fabian and Das Sarma (2002). Recently an interesting study (Saikin et al, 2003) was reported on a Monte Carlo simulation of quantummechanical spin dynamics limited by spin relaxation, in which quasiclassical orbital transport was carried out for the in-plane transport in III-V heterostructures where spin precession is due to bulk and structure inversion asymmetry (see Sec. III.B.2).…”

Section: Spin-polarized Drift and Diffusionmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

View full text Add to dashboard Cite

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

show abstract

Section: Spin-polarized Drift and Diffusionmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

View full text Add to dashboard Cite

show abstract

“…A comprehensive review of the Monte Carlo method and its extension to inclusion of spin degree of freedom has been presented elsewhere 7,8,13 . We restrict our discussion to enlisting the essential features of our model.…”

Section: Modelmentioning

confidence: 99%

“…The electron-electron scattering merely leads to a redistribution in k space which is not of such a high importance in most conventional electronic systems. This tradition of not including electron-electron scattering has been carried over in one of the early works on Monte Carlo method for spin transport 13 , and in several subsequent works [14][15][16] . Given the nature of DP and EY spin relaxation mechanisms, electron-electron scattering is bound to be of utter importance.…”

Section: Introductionmentioning

confidence: 99%

The role of electron-electron scattering in spin transport

Kamra

Ghosh

2011

Journal of Applied Physics

View full text Add to dashboard Cite

We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.

show abstract

“…Even without a source of spin injection, a nonequilibrium spin could be generated through the process of spin extraction [20,29] into a neighboring magnetic region. Our findings should also provide useful test cases for developing more general numerical methods for treating spin-polarized transport [30].…”

mentioning

confidence: 99%

Spin Injection and Detection in Silicon

2006

View full text Add to dashboard Cite

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their operation by developing a model for spin-polarized transport across a heterojunction. We find that equilibrium spin polarization of holes leads to a strong modification of the spin and charge dynamics of electrons, and we show how the symmetry properties of the charge current can be exploited to detect spin injection in silicon using currently available techniques.In addition to its central role in conventional electronics, silicon has spin-dependent properties (such as long spin relaxation and decoherence times) that could be particularly useful in spin-based quantum-information processing and spintronics [1]. Unfortunately, the underlying origins of these attractive properties-the indirect band gap, weak spin-orbit coupling, and extremely small concentration of paramagnetic impurities [2]-also preclude using the standard optical methods of spin injection and detection in semiconductors.Circularly polarized light can be used to polarize carriers in semiconductors with a direct band gap. Moreover, both the direction and the magnitude of optically generated charge currents [3,4] and pure spin currents [5,6] can be controlled optically. In the reverse process, the presence of polarized carriers in a direct-gap semiconductor can be detected by measuring the circular

show abstract

Semiclassical Monte Carlo model for in-plane transport of spin-polarized electrons in III–V heterostructures

Cited by 72 publications

References 74 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

The role of electron-electron scattering in spin transport

Spin Injection and Detection in Silicon

Contact Info

Product

Resources

About