Semiconductor behavior of Li doped ZnSnO thin film grown by mist-CVD and the associated device property

Advanced artificial synaptic thin-film transistor based on doped potassium ions for neuromorphic computing via third-generation neural network

“…40 After the removal of the gate voltage, the penetrated K + ions will gradually diffuse back to the original equivalent position, and this process will take a long period of time, leading to long-term retention of the increased channel conductance. [25][26][27] As mentioned above, the mobile K + ions within K + doped AlO x dielectric contribute to the formation of an EDL and electrochemical doping, resulting in short-term retention and longterm retention, respectively. 23,[41][42][43] To prove the existence of the EDL, the metal-insulated semiconductor structure device was fabricated (Fig.…”

“…Recently, the mechanism for devices to possess synaptic properties has been proposed tentatively, such as electrostatic modulation, iontronic theory, and ferroelectric effect theory. 2,14,[25][26][27][28] Moreover, many kinds of research are worth discussing on how to optimize the mechanism of synaptic devices. At the same time, it is worthwhile to study the mechanism of the synaptic transistors from the perspective of material characterization.…”

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor

“…It is assumed that as In–O, which has relatively low dissociation energy compared to Ga–O, increases, oxygen binding becomes weaker and shifts toward lower binding energy. , The oxygen content of the TM-IGO film was higher than that of DT-IGO despite having the same InO subcycles. The low concentration of oxide film could cause many oxygen-deficient defects, such as oxygen vacancy (V O ). ,, This discrepancy can be explained by the different reactivities of ligand types despite having the same oxygen plasma conditions.…”

“…The low concentration of oxide film could cause many oxygen-deficient defects, such as oxygen vacancy (V O ). 13,43,44 This discrepancy can be explained by the different reactivities of ligand types despite having the same oxygen plasma conditions.…”

Low temperature and high-performance ZnSnO thin-film transistors engineered by in situ thermal manipulation

“…For example, Lim et al have achieved high saturation mobility of 24.7 cm 2 V À1 s À1 in Li-doped ZTO TFT, and they considered the improved performances result from the contribution of additional free electrons and the passivation of defects that act as carrier traps. 10 Dai et al have enhanced the electrical properties of ZTO TFT by N incorporation and obtained high mobility of 41.8 cm 2 V À1 s À1 annealed at 635 1C. 11 Similar researches include Zr-ZTO, 12 Ta-ZTO, 13 Li-ZTO, 14 Nb-ZTO, 15 Al-ZTO 16 and Hf-ZTO.…”