Semiconductor Wafer Bonding

Gösele, U.; Tong, Qiaoling

doi:10.1146/annurev.matsci.28.1.215

Cited by 306 publications

(190 citation statements)

References 97 publications

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“…Wafer bonding now also involves semiconductors other than silicon such as Ge 4 and GaAs. 5 However, the H-induced exfoliation of III-V semiconductors for layer transfer onto foreign substrates has proven to be more difficult than exfoliation of Si for fabrication of SOI. Indeed, it was only recently shown that the concept of hydrogen-induced exfoliation can be applied to the transfer of thin films of InP and GaAs to foreign substrates.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared ͑FTIR͒ spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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“…2,3 An alternative approach is to employ direct-bonded interconnects between subcells of a multijunction cell, which enables dislocationfree active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces. [4][5][6][7][8] We report here a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/ InGaAs two-junction cell, to demonstrate a proof of principle for the viability of direct wafer bonding for solar cell applications.…”

mentioning

confidence: 99%

Direct-bonded GaAs∕InGaAs tandem solar cell

Tanabe

Morral

Atwater

et al. 2006

Applied Physics Letters

114

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A direct-bonded GaAs/ InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-mismatched epitaxial heterostructure growth. The bonded interface is a metal-free n + GaAs/ n + InP tunnel junction. The tandem cell open-circuit voltage is approximately the sum of the subcell open-circuit voltages. The internal quantum efficiency is 0.8 for the GaAs subcell compared to 0.9 for an unbonded GaAs subcell near the band gap energy and is 0.7 for both of the InGaAs subcell and an unbonded InGaAs subcell, with bonded and unbonded subcells similar in spectral response.

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“…16 This technique negates the need for an adhesive or polymer to bond the wafers. Such substances could not only have caused blockages to the capillaries but would have introduced unwanted reflections in the THz signal and may well have caused THz absorptions.…”

Section: Device Fabricationmentioning

confidence: 99%

Silicon based microfluidic cell for terahertz frequencies

Baragwanath

Swift

Dai

et al. 2010

Journal of Applied Physics

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We present a detailed analysis of the design, fabrication and testing of a silicon based, microfluidic cell, for transmission terahertz time-domain spectroscopy. The sensitivity of the device is tested through a range of experiments involving primary alcohol/water mixtures. The dielectric properties of these solutions are subsequently extracted using a Nelder–Mead search algorithm, and are in good agreement with literature values obtained via alternative techniques. Quantities in the order of 2 μmol can be easily distinguished for primary alcohols in solution, even with the subwavelength optical path lengths used. A further display of the device sensitivity is shown through the analysis of commercial whiskeys, where there are clear, detectable differences between samples. Slight absorption variations were identified between samples of the same commercial brand, owing to a 2.5% difference in their alcoholic content. Results from data taken on subsequent days after system realignment are also presented, confirming the robustness of the technique, and the data extraction algorithm used. One final experiment, showing the possible use of this device to analyze aqueous biological samples is detailed; where biotin, a molecule known for its specific terahertz absorptions, is analyzed in solution. The device sensitivity is once again displayed, where quantities of 3 nmol can be clearly detected between samples.

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Semiconductor Wafer Bonding

Cited by 306 publications

References 97 publications

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

Direct-bonded GaAs∕InGaAs tandem solar cell

Silicon based microfluidic cell for terahertz frequencies

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