Semipolar III-nitride laser diodes with zinc oxide cladding

Myzaferi, A.; Reading, Arthur H.; Cohen, Daniel; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1364/oe.25.016922

Cited by 10 publications

(5 citation statements)

References 23 publications

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“…It is worth noting that all the annealed Pd/Ni/Au contacts produce somewhat similar low resistances on GaN based laser diode, all the specific contact resistances are stable at the order of ~10 −4 Ω•cm 2 . By optimizing the thickness of the metal layer, the contact resistivity achieved could be ~10 −5 Ω•cm 2 , which is lower by one order of magnitude compared to UCSB GaN lasers [47,48]. The results show that the use of the Pd interlayer plays a crucial role in improving ohmic contact characteristics.…”

Section: The Effect Of Ni and Pd Thickness In Pd/ni/aumentioning

confidence: 89%

Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact

et al. 2019

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We report an investigation of the effects of different metal systems and surface treatment on the contact performance of GaN lasers. We found that multi-element metal alloy and surface chemical treatment are the keys to achieve good ohmic behavior contacts on GaN laser diodes. Pd/Ni/Au contact demonstrates excellent thermal stability and lowest specific contact resistivity in these metal systems. Properly adjusting the thickness of the Pd and Ni layer and pretreating with the KOH solution can further improve the ohmic contact performance. The improved ohmic behavior of the KOH solution pretreated Pd/Ni/Au contact is attributed to removing surface oxides and the reduction of the schottky barrier heights due to the metal Pd has a high work function and the interfacial reactions occurring between the Pd, Ni, Au, and GaN extends into the GaN film. As a result, a low contact resistivity of 1.66 × 10−5 Ω·cm2 can be achieved from Pd(10 nm)/Ni(10 nm)/Au(30 nm) contacts with KOH solution pretreated on top of the laser diode structure. The power of the GaN based laser diode with the Pd/Ni/Au metallization ohmic contact can be enhanced by 1.95 times and the threshold current decreased by 37% compared to that of the conventional ohmic contact Ni/Au.

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Section: The Effect Of Ni and Pd Thickness In Pd/ni/aumentioning

confidence: 89%

Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact

et al. 2019

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“…Due to its low resistance, high transmittance in the visible and near infrared spectrum, stable physical and chemical properties, and strong adherence to a variety of substrates, ITO material has several of benefits [9], [24]. The implementation of the optimized ITO films onto advanced laser design has been demonstrated in InGaN based laser structure [20], [21] incorporating TCO with the thin p-GaN top cladding layers [10], [11]. However, a high substrate temperature ( ≥ 250 °C) and an ideal oxygen flow are needed to produce ITO films with low resistance and high transmittance.…”

Section: Figure 1: Hybridizations Of Carbon In Diamond-like Carbon (D...mentioning

confidence: 99%

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Abbas,

Hiazaa,

Jalalah

et al. 2023

Adv. Nan. Res.

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The present research addresses the synthesis of carbon materials thin films by RF-PECVD in N2/CH4 gas mixture. Carbon materials film was formed at 40/48 sccm of CH4/N2 of the total gas flow rate ratio CH4/CH4+N2 = 0.45 and 200/100 W HF/LF power at a deposition temperature of 350 oC and 1000 mTorr pressure. Then, post-annealing of carbon materials film took place at 400 oC by means of RTA under N2 flow. The formation of carbon nanostructures was investigated by scanning electron microscopy, energy dispersive X-ray, Raman spectroscopy, and atomic force microscopy, respectively. AFM shows that the films consisted of nanocrystalline grains. The surface morphology and structural characteristics of materials were studied as a gas flow function and substrate temperature. EDX results indicated the carbon presence, and Raman spectroscopy analysis revealed two broad bands: D-band 1381.64 cm−1 and G-band 1589.42 cm−1. The temperature-dependent post-annealing of carbon materials plays a key role in the graphite crystallites growth at high substrate temperatures. Our results indicate carbon materials incorporation for laser diode applications.

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“…For example, a pulsed high-power AlGaN-cladding-free blue LDs with an optical power of 2.15 W and external quantum efficiency (EQE) of 39% was reported [57]. The InGaN-based LD design and device performance are summarized in Table 2 [1, [58][59][60][61][62][63][64][65][66][67].…”

Section: Devices In Laser-based Vlc Systemsmentioning

confidence: 99%

“…Moreover, by incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride LDs, the device performance can be improved by reducing the growth time and temperature of the p-type layers. Both indium-tin-oxide and zinc oxide (ZnO) have been utilized as the top cladding layer, replacing a thick p-GaN layer to fabricate semipolar GaN LDs [61,63,65]. The improved thermal performance was also observed for the thin p-GaN LDs resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature [61].…”

Section: Devices In Laser-based Vlc Systemsmentioning

confidence: 99%

A tutorial on laser-based lighting and visible light communications: device and technology [Invited]

et al. 2019

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This tutorial focuses on devices and technologies that are part of laser-based visible light communication (VLC) systems. Laser-based VLC systems have advantages over their light-emitting-diode-based counterparts, including having high transmission speed and long transmission distance. We summarize terminologies related to laser-based solid-state lighting and VLC, and further review the advances in device design and performance. The high-speed modulation characteristics of laser diodes and superluminescent diodes, the on-chip integration of optoelectronic components in the visible color regime, such as the high-speed integrated photodetector, were introduced. The modulation technology for laser-based white light communication systems, and the challenges for future development were then discussed.

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Semipolar III-nitride laser diodes with zinc oxide cladding

Cited by 10 publications

References 23 publications

Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact

Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

A tutorial on laser-based lighting and visible light communications: device and technology [Invited]

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