Abstract.The coexistence of ordered and disordered polytypes in SiC deposits is discussed from the point of view of their formation under CVD/CVI conditions, i.e., far from equilibrium. Local deformations at layer n are considered to determine the orientation and the deformations of the (n + l) th layer. An analysis of this dependence is made by constructing a first return map of an atomic relaxation variable, based on the ab initio calculation data for some regular polytypes made by Cheng et al., [ J. Phys. (Condens. Matter) 2 (1990) 5115]. Orientation sequences are linked to the local deformation parameter, and to 29 Si and 13 C NMR shifts. Iterations of this map are considered as a one-dimensional dynamical system simulating layer-by-layer growth. Depending on control parameters, the dynamical system exhibits stationary, periodic or chaotic orientation sequences, reproducing many experimentally obtained polytypes. The occurrence of CVD-or CVI-grown one-dimensionally disordered polytypes can thus possibly arise from a deterministic process able to yield also regular structures for nearby values of control parameters.TEXT.