Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Chen, Chong; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Xie, Hong‐Guang

doi:10.3390/mi12010019

Cited by 25 publications

(6 citation statements)

References 27 publications

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“…As a result, we can conclude that as the dielectric constant of biomolecules decreases, resistance decreases and on-state current increases. As the dielectric constant increases, oxide capacitance increases, and the depletion capacitance decreases as the width of the depletion layer decreases; therefore, the drain current increases [33].…”

Section: Resultsmentioning

confidence: 99%

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Mann¹,

Sharma²,

Rewari³

et al. 2023

Semicond. Sci. Technol.

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This paper proposes an analytical model for a Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of neutral species such as Biotin, Keratin, ChOx, and Zein. When only one subband is occupied and the AlGaN layer is assumed to have been fully ionized, the Fermi-Dirac statistic and 2D state density are used to produce a self-consistent calculation of the carrier density in the quantum well at the interface.It is done by analyzing the impact of biomolecule concentration by inserting a biomolecule of appropriate dielectric permittivity in the cavity area beneath the gate region. The impact of cavity length has been analyzed on the sensor's performance. The proposed device significantly changes the channel potential, transconductance, drain current, and threshold voltage.Dual gate structures offer superior resistance to short channel effects. Due to enhanced transport characteristics, high carrier mobility, drain current, and a variety of other factors, double gate MOS HEMT outperforms single gate MOS HEMT.The maximaltransconductance,drain on sensitivity, and the maximaldrain currentthat has been attained in this work is 0.017S, 0.22 and 0.129mA, respectively, for biomolecule concentration, Nb=3×10¹².Among all the biomolecules used in this study, Keratin has achieved the maximum shift in threshold voltage and transconductance of 0.4V and 0.016S. The increase in current for Keratin, Biotin, Zein, and ChOx is 0.67%, 78%, 17%, and 42%, respectively, from single to Dual gate AlGaN/GaN MOS-HEMT. SiO2, Al2O3, and HfO2oxides have been compared by filling them in the left side of the cavity. Dual gate AlGaN/GaN MOS-HEMT biosensor presents an opportunity to develop robust, low-cost, specific detection and analysis of neutral biomolecule.The analytical model provides good results for drain current according to the comparison of simulation and analytical model findings.

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Section: Resultsmentioning

confidence: 99%

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Mann¹,

Sharma²,

Rewari³

et al. 2023

Semicond. Sci. Technol.

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“…The formula for the S SS is [ 30 ]:

where SS air is the average subthreshold swing of the sensor when the nanogap is filled with air and SS bio is the average subthreshold swing of the sensor when the nanogap is filled with biomolecules.…”

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET

Chen

Liu

et al. 2023

Nanomaterials

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In order to detect biomolecules, a biosensor based on a dielectric-modulated stacked source trench gate tunnel field effect transistor (DM-SSTGTFET) is proposed. The stacked source structure can simultaneously make the on-state current higher and the off-state current lower. The trench gate structure will increase the tunneling area and tunneling probability. Technology computer-aided design (TCAD) is used for the sensitivity study of the proposed structured biosensor. The results show that the current sensitivity of the DM-SSTGTFET biosensor can be as high as 108, the threshold voltage sensitivity can reach 0.46 V and the subthreshold swing sensitivity can reach 0.8. As a result of its high sensitivity and low power consumption, the proposed biosensor has highly promising prospects.

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“…Apart from flexible electronics, fabrication of low power devices also involves device modifications such as in dielectrically modulated L shaped gate tunneling field effect transistors (DM-LTFETs), which are suitable for high sensitivity and low power consumption biosensors [ 102 ]. Further development of low power biosensors requires a thorough investigation on various computational models used to minimize power without compromising on performance.…”

Section: Challenges In Current Leakage Power Dissipation and Proposed...mentioning

confidence: 99%

Advancement and Challenges of Biosensing Using Field Effect Transistors

Thriveni

Ghosh

2022

Biosensors

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Field-effect transistors (FETs) have become eminent electronic devices for biosensing applications owing to their high sensitivity, faster response and availability of advanced fabrication techniques for their production. The device physics of this sensor is now well understood due to the emergence of several numerical modelling and simulation papers over the years. The pace of advancement along with the knowhow of theoretical concepts proved to be highly effective in detecting deadly pathogens, especially the SARS-CoV-2 spike protein of the coronavirus with the onset of the (coronavirus disease of 2019) COVID-19 pandemic. However, the advancement in the sensing system is also accompanied by various hurdles that degrade the performance. In this review, we have explored all these challenges and how these are tackled with innovative approaches, techniques and device modifications that have also raised the detection sensitivity and specificity. The functional materials of the device are also structurally modified towards improving the surface area and minimizing power dissipation for developing miniaturized microarrays applicable in ultra large scale integration (ULSI) technology. Several theoretical models and simulations have also been carried out in this domain which have given a deeper insight on the electron transport mechanism in these devices and provided the direction for optimizing performance.

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Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Cited by 25 publications

References 27 publications

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model

Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET

Advancement and Challenges of Biosensing Using Field Effect Transistors

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