Sensory Adaptation and Neuromorphic Phototransistors Based on CsPb(Br_1–xI_x)₃ Perovskite and MoS₂ Hybrid Structure

Abstract

Sensory adaptation is an essential part of biological neural systems for sustaining human life. Using the light-induced halide phase segregation of CsPb­(Br1–x I x )3 perovskite, we introduce neuromorphic phototransistors that emulate human sensory adaptation. The phototransistor based on a hybrid structure of perovskite and transition-metal dichalcogenide (TMD) emulates the sensory adaptation in response to a continuous light stimulus, similar to the neural system. The underlying mechanism for the sensory adaptation is the halide segregation of the mixed halide perovskites. The phase separation under visible-light illumination leads to the segregation of I and Br into separate iodide- and bromide-rich domains, significantly changing the photocurrent in the phototransistors. The devices are reversible upon the removal of the light stimulation, resulting in near-complete recovery of the photosensitivity before the phase segregation (sensitivity recovery of 96.65% for 5 min rest time). The proposed phototransistor based on the perovskite–TMD hybrid structure can be applied to other neuromorphic devices such as neuromorphic photonic devices, intelligent sensors, and selective light-detecting image sensors.

Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

“…Finally, we demonstrate the image-sensing characteristics of the active pixel image sensor array using light stencil projection. The proposed active pixel image sensor array can potentially be used for future image-sensing applications, such as ultra-thin image sensors, transparent image sensors, artificial-intelligence photosensors, and selective light-detecting imagers 29 – 32 .…”

Photoelectric Visual Adaptation Based on 0D‐CsPbBr3‐Quantum‐Dots/2D‐MoS2 Mixed‐Dimensional Heterojunction Transistor

“…[ 14–16 ] In particular, 0D–2D MvdWHs has been demonstrated to possess various advantages, such as ultrathin material thickness, outstanding photo‐absorption properties, and less constrained lattice matching issues. [ 17–20 ] Hence, by combining the numerous extraordinary optoelectronic properties of 0D quantum dots (QDs) with the remarkable physical properties of 2D layered materials, 0D–2D MvdWHs may achieve fascinating properties of low energy and high performance for the next‐generation photoelectric devices.…”

Metal Halide Perovskite/2D Material Heterostructures: Syntheses and Applications

“…A variety of 0D/2D vdWs heterostructures have been fabricated by spin‐coating perovskite NCs on the surface of 2D material films. [ 33g,41b ,54 ]…”

“…Although the charge carrier behavior of 0D‐2D vdWs heterostructures can be effectively manipulated by the band structure engineering, the suppressed charge transfer rate originated from the residue ligands of QDs remains unsolved. [ 54b ] To solve this problem, a surface ligand density control strategy was reported by Wu et al. to balance the QD surface passivation and the interfacial charge transfer efficiency.…”

“…reported that a high solution concentration of QDs with proper surface ligand content is essential to achieve a high light absorption, fast exciton dissociation and charge transfer of 0D‐2D vdWs heterostructure. [ 54c ] The optimized hybrid photodetectors show a high photoresponsivity of 6.40 × 10 5 mA W −1 , an EQE of 1.50 × 10 5 %, and a detectivity of 3.38 × 10 11 Jones.…”