Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model

Lee, J.H.; Wu, Wei-Cheng; Islam, Ahmad E.; Alam, M. A.; Oates, A. S.

doi:10.1109/relphy.2008.4559018

Cited by 39 publications

(31 citation statements)

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“…This behavior has been observed experimentally [20], so it is recognized to be a plausible explanation of the NBTI effect. Meanwhile, RTS has been explained to be due to hole trapping/detrapping, and therefore should be related to NBTI.…”

Section: Introductionsupporting

confidence: 61%

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Analysis of the relationship between random telegraph signal and negative bias temperature instability

Tsukamoto

Toh

Shin

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Abstract-Random telegraph signal (RTS) is shown to be an intrinsic component of the shift in MOSFET threshold voltage (V th ) due to bias temperature instability (BTI). This is done by starting from a well-known model for negative BTI (NBTI), to derive the formula for RTS-induced V th shift. Based on this analysis, RTS simply contributes an offset in NBTI degradation, with an acceleration factor that is dependent on the gate voltage and temperature. This is verified by 3-dimensional (3-D) device simulations and measurements of 45nm-node bulk-Si PMOS transistors. It has an important implication for design of robust SRAM arrays in the future: design margin for RTS should not be simply added, because it is already partially accounted for within the design margin for NBTI degradation.

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Section: Introductionsupporting

confidence: 61%

“…In (7), the first term corresponds to shallow traps, the second to deep traps, and the third to interface traps. Considering that actual NBTI measurements of V th vs. t can be fitted to the empirical model V th =C+Dt n [20], the first term is included in C, i.e. the effect of RTS is included in NBTI degradation.…”

Section: Theoretical Analysismentioning

confidence: 99%

Analysis of the relationship between random telegraph signal and negative bias temperature instability

Tsukamoto

Toh

Shin

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…The presence of ΔN h (more for films with high Si/SiON N density) in addition to ΔN IT reduces the time and T dependence of overall NBTI [3], [6], [7], [10]. The separation of ΔN IT and ΔN h (see [3], [6], [16], [24], and [25] for recent attempts) is important for the extrapolation of stress data to end of life for the estimation of device lifetime. 5 In this paper, a simple method is proposed to isolate the ΔN IT and ΔN h component of overall NBTI degradation in PNO p-MOSFETs treated with proper two-step PNA.…”

Section: Index Terms-activation Energy Field Acceleration Hole Trapmentioning

confidence: 99%

Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs

Mahapatra

Maheta

Islam

et al. 2009

IEEE Trans. Electron Devices

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Abstract-In this paper, a simple phenomenological technique is used to isolate the hole-trapping and interface trap generation components during negative bias temperature instability (NBTI) stress in plasma nitrided oxide (PNO) p-MOSFETs. This isolation methodology reconciles the apparent differences between experimentally measured NBTI power-law time exponents obtained by ultrafast on-the-fly I DLIN method, which are the ones obtained using slightly delayed but very long-time measurements, and the corresponding exponents predicted by the reaction-diffusion model. A systematic validation of the isolation technique is provided through degradation data taken over a broad range of operating conditions and a wide variety of PNO processes, to establish the robustness and uniqueness of the separation procedure.Index Terms-Activation energy, field acceleration, hole trapping, interface traps, negative bias temperature instability (NBTI), plasma oxynitride, p-MOSFET, reaction-diffusion (R-D) model, time exponent.

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“…14(a), and our model shows a higher exponent as opposed to experimental data. Recently published works [29], [30], [41] have shown that this is nevertheless consistent with a H 2 diffusion based R-D model, and attribute this discrepancy in short-term measurements to the assumption that H-to-H 2 conversion is extremely fast, which may not be realistic [41]. A detailed analysis of the H↔H 2 conversion has been incorporated into an analytical model recently by [29], and the fit of the model with the experimental data indeed verifies that this is true.…”

Section: B Ac Stress (Single Stress Phase Followed By a Single Relaxmentioning

confidence: 99%

“…However, alternative views among researchers exist, particularly about the inability of the R-D model to explain some key phenomena, as detailed in [17]- [21]. This has led to alternative models such as [17], [22]- [26], as well as efforts to resolve the controversy between the R-D model theory and the hole trapping theory [27]- [30]. While, this area is still under active research, the domain of our work is restricted to NBTI modeling based on the R-D theory.…”

Section: Introductionmentioning

confidence: 99%

A Finite-Oxide Thickness-Based Analytical Model for Negative Bias Temperature Instability

Kumar

Kim

Sapatnekar

2009

IEEE Trans. Device Mater. Relib.

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Abstract-Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a serious reliability concern in present day digital circuit design. With continued technology scaling, and reducing oxide thickness, it has become imperative to accurately determine its effects on temporal circuit degradation, and thereby ensure reliable operation for a finite period of time. A reaction-diffusion (R-D) based framework is developed for determining the number of interface traps as a function of time, for both the DC (static NBTI) and the AC (dynamic NBTI) stress cases. The effects of finite oxide thickness, and the influence of trap generation and annealing in polysilicon, are incorporated. The model provides a good fit with experimental data, and also provides a satisfying explanation for most of the physical effects associated with the dynamics of NBTI. A generalized framework for estimating the impact of NBTI-induced temporal degradation in present day digital circuits, is also discussed.

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Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model

Cited by 39 publications

References 0 publications

Analysis of the relationship between random telegraph signal and negative bias temperature instability

Analysis of the relationship between random telegraph signal and negative bias temperature instability

Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs

A Finite-Oxide Thickness-Based Analytical Model for Negative Bias Temperature Instability

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