Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires

Li, Z.; Chen, Y.; Li, X.; Kamins, T. I.; Nauka, K.; Williams, R. Stanley

doi:10.1021/nl034958e

Cited by 710 publications

(522 citation statements)

References 16 publications

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“…One first explanation could be a transfer of charges (electrons) of the bacteria into the nanowires which fill the traps previously mentioned, and thus could and contribute to the decrease of the electrical resistivity of the nanowires [23]. Another possible reason is that the electrically charged bacteria may behave as biological gate resulting as wellknown field effect [13][14][15]17] on the SiNWs. At last, other explanation is that bacteria may act as additional conducting paths randomly distributed between teeth thanks to hooking effect of bacteria into the SiNWs network.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, based on this detection method, many groups have reported on field effect transistors (FET) used as biochemical sensors. In particular, chemical or biochemical (DNA hybridization) [13,14], gas [15] or mechanical [16] sensors, have been demonstrated using silicon nanowires (SiNWs) based FETs. In this case nanowires act as sensing elements.…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, many previous studies based on materials, 4 structures and functionalization are reported into literature, but the proposed solutions do not fulfill the requirements for integration into a sensor. The major problem is the realization of such high-performance sensor with a low-cost technology, while the technological means used for the realization of nanowires require high cost and complex technologies based on ebeam lithography [14] or transfer techniques [19]. Nevertheless, alternative self-assembly methods [20] are promising for synthesis of nanowires and do not require expensive In this way, in this study the feasibility of SiNWs based resistor for bacteria detection with SiNWs used as sensing elements synthesized by vapour liquid solid (VLS) mechanism [20] (self-assembly method) is investigated.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Bacteria electrical detection using 3D silicon nanowires based resistor

Borgne

Pichon

Salaün

et al. 2018

Sensors and Actuators B: Chemical

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Bacteria electrical detection using 3D silicon nanowires based resistor

Borgne

Pichon

Salaün

et al. 2018

Sensors and Actuators B: Chemical

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“…Silicon nanowire field-effect transistors (SiNW-FET) have shown great sensitivity when employed as biological/ chemical sensors (bioFETs). [1][2][3] The principle of operation is that a charged species bound to the nanowire (NW) surface (modified with some receptor molecules) induces a change in surface potential at the NW surface, which translates into a change in drain-to-source current (DI) which is then measured. It is well-known that the sensitivity (defined as DI/I for a current based sensing experiment) is maximized in the subthreshold regime.…”

mentioning

confidence: 99%

Optimal signal-to-noise ratio for silicon nanowire biochemical sensors

Rajan

Routenberg

Reed

2011

Applied Physics Letters

105

100

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The signal-to-noise ratio (SNR) for silicon nanowire field-effect transistors operated in an electrolyte environment is an essential figure-of-merit to characterize and compare the detection limit of such devices when used in an exposed channel configuration as biochemical sensors. We employ low frequency noise measurements to determine the regime for optimal SNR. We find that SNR is not significantly affected by the electrolyte concentration, composition, or pH, leading us to conclude that the major contributions to the SNR come from the intrinsic device quality. The results presented here show that SNR is maximized at the peak transconductance. Silicon nanowire field-effect transistors (SiNW-FET) have shown great sensitivity when employed as biological/ chemical sensors (bioFETs). [1][2][3] The principle of operation is that a charged species bound to the nanowire (NW) surface (modified with some receptor molecules) induces a change in surface potential at the NW surface, which translates into a change in drain-to-source current (DI) which is then measured. It is well-known that the sensitivity (defined as DI/I for a current based sensing experiment) is maximized in the subthreshold regime. 4-6 However, it is also known that the normalized current noise power amplitude (S I /I 2 ) reaches a plateau and is highest in the subthreshold regime for siliconsilicon oxide devices 7,8 and concerns have been expressed that signal-to-noise ratio (SNR) would be impacted for measurements carried out in subthreshold. 4,9 On the other hand, S I /I 2 is lower in the linear regime but the sensitivity is also lower. In order to determine the ideal regime for optimal SNR, we carry out both I-V and noise measurements for solution gated devices. Our measurements indicate that the current noise is independent of electrolyte concentration, composition, or pH, leading us to conclude that the intrinsic electronic properties of the SiNW bioFETs determine the optimal SNR achievable by these sensors. We also find that SNR is maximized in the linear regime at the point where the transconductance is largest.The SiNWs were fabricated from SOI wafers (Soitec) with a high resistivity boron doped active layer (>2000 ohm cm) as described previously. 10 Devices used for the experiments were nominally 100 nm wide and 5 lm long. The devices were covered with a passivation layer of SU-8 (an epoxy based negative photoresist) with windows opened for the NW channel and the contact pads. An optical micrograph of the devices is shown in Fig. 1(b). The NW surfaces were functionalized with a monolayer of APTES (3-aminopropyltriethoxysilane) using the protocol described earlier, 11 which increases device stability and reduces gate leakage current in solution. A fluidic well was then glued on top of each chip for the sensing experiments, with a platinum wire used as the solution gate electrode. The device structure and experimental setup is shown schematically in Fig. 1(a). For all noise and transfer characteristics measurements, the back-gate contact was l...

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“…Nanostructures have been demonstrated in numerous device applications ranging from AFM imaging [1] and photodetection [2] to chemical [3][4][5][6] and biological [7][8][9][10][11] sensing. These devices utilize the unique properties of nanowires, nanotubes, nanoribbons, etc., as their active element.…”

Section: Motivationmentioning

confidence: 99%

Contact detection for nanomanipulation in a scanning electron microscope

2012

Ultramicroscopy

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A major difficulty in the fabrication of nanostructure based electronics is the lack of effective processes capable of precisely arranging nanostructures into predefined positions. Top-down approaches introduce increased complexity and a high cost for practical industrial use, while bottom-up approaches are probabilistic in nature and do not provide precise control of nanostructure properties (i.e., number, diameter), which influence device performance.Alternatively, nanomanipulation promises specificity, precision and programmed motion and its automation may facilitate the large-scale fabrication of nanostructure based devices.This study focuses on the development of an automated contact detection algorithm which positions an end-effector in contact with a target surface without the need for additional equipment, devices or sensors. We demonstrate this algorithm as an enabling feature for automated nano-FET biosensor construction with precise control over nanowire parameters thereby reducing device-to-device variability and also potentially allowing us to optimize individual device performance.iii

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Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires

Cited by 710 publications

References 16 publications

Bacteria electrical detection using 3D silicon nanowires based resistor

Bacteria electrical detection using 3D silicon nanowires based resistor

Optimal signal-to-noise ratio for silicon nanowire biochemical sensors

Contact detection for nanomanipulation in a scanning electron microscope

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