Sequential deposition of Cu(In,Ga)(S,Se)/sub 2/

Zweigart, S.; Walter, T.; Köble, Ch.; Sun, Shuaihui; Rühle, U.; Schock, H.W.

doi:10.1109/wcpec.1994.519810

Cited by 10 publications

(7 citation statements)

References 2 publications

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“…[61][62][63] An 'inverse' two-stage process starts with a precursor layer that is more Cu-poor than the finished film. 64,65 The so-called three-stage process, introduced by NREL, 66 is obtained by starting the deposition with an (In,Ga) x Se y precursor, followed by the co-deposition of Cu and Se until Cu-rich overall composition is reached, and finally the overall Cu concentration is readjusted by subsequent deposition of In, Ga and Se. 66 This method leads, up to now, to the most efficient solar cells.…”

Section: Cigs Layersmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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Section: Cigs Layersmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

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“…Another possibility is the inverted process where first (In,Ga) 2 Se 3 is deposited at a lower temperature (typically ∼300 • C). Then Cu and Se are evaporated at an elevated temperature until an overall composition close to stoichiometry is reached [102][103][104]. This process leads to smoother film morphology than bilayer process.…”

Section: Cigs Absorber Layer-deposition Methodsmentioning

confidence: 99%

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

Singh

Patra

2010

International Journal of Photoenergy

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For some time, the chalcopyrite semiconductor CuInSe2and its alloy with Ga and/or S [Cu(InGa)Se2or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

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“…CuIn 1-x Ga x Se 2 /CdS (with x=0.25) thin film solar cells can exhibit an efficiency around 20% [4][5][6][7][8]. This is the highest efficiency ever obtained for a thin film solar cell and it is comparable with the best crystalline Si solar cells.…”

Section: Key Points In Cuingase Technologymentioning

confidence: 97%

The second‐generation of CdTe and CuInGaSe₂ thin film PV modules

Bosio

Romeo

Menossi

et al. 2011

Cryst. Res. Technol.

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The state of the art of the second-generation of solar cells based on the CdTe and CuInGaSe 2 thin film technology will be described. This type of cells reached, on laboratory scale, photovoltaic conversion efficiencies respectively of 16.5% and 20.3% very close to those obtained with bulk materials. In particular, the materials, the layer sequences and deposition techniques used for the preparation of these two absorbers are described. Particular emphasis will be placed on major innovations that have enabled us to achieve high efficiencies with polycrystalline materials, showing how thin-film technology is mature enough to be transferred to industrial production. Finally, we will discuss about a project of technology-transfer developed at Parma University for the production of photovoltaic modules at an industrial level. In the near future, with our process, Arendi S.p.A. will reach a productivity of 18 MW/year.

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Sequential deposition of Cu(In,Ga)(S,Se)/sub 2/

Cited by 10 publications

References 2 publications

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

The second‐generation of CdTe and CuInGaSe₂ thin film PV modules

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Sequential deposition of Cu(In,Ga)(S,Se)/sub 2/

Cited by 10 publications

References 2 publications

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

The second‐generation of CdTe and CuInGaSe2 thin film PV modules

Contact Info

Product

Resources

About

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

The second‐generation of CdTe and CuInGaSe₂ thin film PV modules