2010
DOI: 10.1109/jmems.2010.2049731
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Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers

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Cited by 17 publications
(18 citation statements)
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“…Because gold (Au) nanoantennas will be embedded into the nanofluidics, bonding performed at complementary metal-oxide-semiconductor (CMOS)-compatible temperatures is necessary to protect the metal shapes. According to the previous studies, fluorine (F)- or nitrogen (N)- , contained plasma can be more effective in modifying surfaces and strength bonding interfaces. Here, we developed an NH 3 /O 2 /H 2 O plasma-activated low-temperature direct bonding method for Al 2 O 3 and SiO 2 .…”
Section: Results and Discussionmentioning
confidence: 99%
“…Because gold (Au) nanoantennas will be embedded into the nanofluidics, bonding performed at complementary metal-oxide-semiconductor (CMOS)-compatible temperatures is necessary to protect the metal shapes. According to the previous studies, fluorine (F)- or nitrogen (N)- , contained plasma can be more effective in modifying surfaces and strength bonding interfaces. Here, we developed an NH 3 /O 2 /H 2 O plasma-activated low-temperature direct bonding method for Al 2 O 3 and SiO 2 .…”
Section: Results and Discussionmentioning
confidence: 99%
“…Figure 6 shows the HRTEM interface images of a specimen, treated with identical plasma parameters of the specimen A3, except the O 2 RIE power (50 W) and pressure (50 Pa), after annealing at 50, 100, 150, and 225 • C for 1 h in air. 18 The HRTEM images showed intermediate amorphous layers across all the interfaces. The thicknesses of the amorphous layer after annealing at 50, 100, 150, and 225 • C were 3.8, 3.4, 2.8, and 3.3 nm, respectively.…”
Section: Nanointerfacial Behavior At Low Temperaturementioning
confidence: 96%
“…The sequential activation consists of a 50-W oxygen RIE plasma with time of 60 s at 50 Pa and a 2500-W MW nitrogen radical with time of 30 s at 60 Pa 18. …”
mentioning
confidence: 99%
“…In contrast, a lower contact angle indicates a hydrophilic surface. 43 In general the demarcation line between these two surfaces is the contact angle in the ranges of 301-451. 31,44 Our results show that the contact angle for Ti electrodes is 541.…”
Section: Surface Wettability Of the Electrodesmentioning
confidence: 99%