2017
DOI: 10.1016/j.nanoen.2017.09.050
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Sequential solvent processing with hole transport materials for improving efficiency of traditionally-structured perovskite solar cells

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Cited by 26 publications
(21 citation statements)
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“…The optimized large‐grain effect device showed a PCE of 17.20% (Figure b, Figure S3, and Table S1, Supporting Information). The optimized mixed‐layer effect device showed a PCE of 18.36% (Figure b and Table ) . Thus, the dual‐effect devices exhibited better performance than the devices with single effect.…”
Section: Resultsmentioning
confidence: 92%
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“…The optimized large‐grain effect device showed a PCE of 17.20% (Figure b, Figure S3, and Table S1, Supporting Information). The optimized mixed‐layer effect device showed a PCE of 18.36% (Figure b and Table ) . Thus, the dual‐effect devices exhibited better performance than the devices with single effect.…”
Section: Resultsmentioning
confidence: 92%
“…To highlight the advantages of the dual‐effect device, two single effect devices have been fabricated for comparison. One contains only an interdiffusion layer between the MAPbI 3 film and the HTM film (Figure b, termed as the mixed‐layer effect device; see the experimental section for details) . The second one contains only large sized perovskite grains (Figures b and d, termed as large‐grain effect device; see the experimental section for details).…”
Section: Resultsmentioning
confidence: 99%
“…From the dependence of V oc on light intensity in Figure b, the control device showed a slope of 1.67 kT / q , where k is the Boltzmann constant, T is the absolute temperature, and q is the elementary charge. For the PSC based on solvent vapor‐annealed spiro‐OMeTAD, the slope decreased to 1.25 kT / q , indicating reduced trap‐assisted recombination at the interface . The reduced interfacial defect creation due to the improved contact between the perovskite and spiro‐OMeTAD could suppress carrier traps .…”
Section: Resultsmentioning
confidence: 99%
“…The series resistance ( R S ) and shunt resistance ( R SH ) were extracted from the dark J – V measurement (Figure b) . The R S and R SH of meth‐annealed Sb 2 S 3 devices were 8.50 and 534.14 Ω cm 2 , respectively, while they were 18.32 and 414.46 Ω cm 2 for the control devices (Table ).…”
Section: Resultsmentioning
confidence: 99%