SEU study of 4T, 6T, 7T, 8T, 10T MOSFET based SRAM using TCAD simulation

Bhuvaneshwari, Y V; Sai, Nama Prem; Kumar, Nitish; Thiruvenkatesan, C.; Srinivasan, R.

doi:10.1109/icices.2014.7034119

Cited by 7 publications

(1 citation statement)

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“…Therefore, careful TCAD simulations are required to study this competing mechanism. However, these simulations are time-and recourse-consuming but several SRAM blocks can be simulated simultaneously [19].…”

Section: A Memory Organizationmentioning

confidence: 99%

An SRAM-Based Radiation Monitor With Dynamic Voltage Control in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math> </inline-formula>m CMOS Technology

Prinzie

Thys

Bockel

et al. 2019

IEEE Trans. Nucl. Sci.

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This paper presents a novel radiation monitor which is based on a custom SRAM (Static Random Access Memory) ASIC. Its sensitivity is adjustable through its core supply voltage and the radiation monitoring is based on the upset rate that is measured during a measurement-interval in the memory. The sensor has different supply voltages for the SRAM core and the interface logic to prevent incorrect digital signals during the measurement cycle. The memory was processed in a 0.18 µm CMOS technology and was tested with heavy ions with an LET from 1.8-60 MeV.cm 2 /mg, 24 GeV protons and a mixed radiation field. The memory cells were also verified with a Two-Photon Absorption (TPA) Laser. Furthermore, an analysis was made on Single-Event Upsets and multi-bit upsets.

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Section: A Memory Organizationmentioning

confidence: 99%