SEUs Induced by Thermal to High-Energy Neutrons in SRAMs

Granlund, T.; Olsson, N.

doi:10.1109/tns.2006.880930

Cited by 14 publications

(2 citation statements)

References 14 publications

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“…Single event upset (SEU) is widely observed in random static access memory (SRAM) operating in terrestrial neutron environment [1][2][3][4]. 14 MeV neutrons have sufficient energy to induce nuclear reactions with semiconductor materials, which can produce energetic secondary particles [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Simulation of 14 MeV neutron-induced SEU in SRAM

et al. 2023

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This paper presents a full-physical methodology to simulate single event upset (SEU) induced by 14 MeV neutron in static random access memory (SRAM). Nuclear-reaction simulator TALYS is first utilized to acquire valuable information about the secondary particles generated by nuclear interactions between 14 MeV neutrons with both silicon and oxygen nuclei. Based on Geant4 code, a tool named Gproton is used exclusively for the neutron/proton-induced SEU calculation. Pioneering Gproton simulation is used to output SEU candidate events by traditional critical-charge method and computing process is accelerated through a forced collision definition. Afterwards, a commercial TCAD which has good compatibility with the input and output files of the customized Gproton code is employed to distinguish the real SEU events from the candidate SEU events randomly selected. By combining Gproton and TCAD, a calibrated cross section of 14 MeV neutron-induced SEU can be obtained. The proposed method is applied to a 180-nm commercial SRAM with six-transistor memory cell. Predicted SEU cross section is in good agreement with experimentally measured value. The results present in this paper suggest that, for SRAMs exposed in 14 MeV neutron, the combination of the material particle transporting simulation and device TCAD modeling is a candidate method to provide reasonable predictions of the cross section of SEU which improves the accuracy of the prediction effectively.

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Section: Introductionmentioning

confidence: 99%

Simulation of 14 MeV neutron-induced SEU in SRAM

et al. 2023

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“…It is well known that electronic chips must operate at temperatures significantly higher than room temperature, especially for high-performance, space, or automotive applications. Contrary to Single Event Latchup (SEL) tests that are performed at the highest operating temperature [8], [9], SEU measurements are usually carried out at room temperature [10], and little is known about the SEU temperature dependence.…”

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confidence: 99%

Factors impacting the temperature dependence of soft errors in commercial SRAMs

Bagatin

Gerardin

Paccagnella

et al. 2008

2008 European Conference on Radiation and Its Effects on Components and Systems

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We performed neutron and alpha-particle irradiation to reproduce the effects of the terrestrial environment on several commercial SRAMs manufactured by different vendors. We observed that, depending on the tested vendor, the number of errors either increases or slightly decreases for rising temperature, even in devices belonging to the same technology node. SPICE simulations were then used to investigate the temperature dependence of parameters like the feedback time and restoring current of the cell. The shape and magnitude of the particle-induced transient current was discussed as a function of temperature. The variability in the temperature response was attributed to the balance of contrasting factors, such as cell slowing down and increased diffusion collection with increasing temperature.

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Temperature dependence of neutron-induced soft errors in SRAMs

Bagatin

Gerardin

Paccagnella

et al. 2012

Microelectronics Reliability

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a b s t r a c tWe irradiated commercial SRAMs with wide-spectrum neutrons at different temperatures. We observed that, depending on the vendor, the soft error rate either increases or slightly decreases with temperature, even in devices belonging to the same technology node. SPICE simulations were used to investigate the temperature dependence of the cell feedback time and restoring current. The shape and magnitude of the particle-induced transient current is discussed as a function of temperature. The variability in the response is attributed to the balance of contrasting factors, such as cell speed reduction and increased diffusion with increasing temperature.

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SEUs Induced by Thermal to High-Energy Neutrons in SRAMs

Cited by 14 publications

References 14 publications

Simulation of 14 MeV neutron-induced SEU in SRAM

Simulation of 14 MeV neutron-induced SEU in SRAM

Factors impacting the temperature dependence of soft errors in commercial SRAMs

Temperature dependence of neutron-induced soft errors in SRAMs

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