Several millimeters long SiC–SiOx nanowires synthesized by carbon black and silica sol

Hu, Ping; Pan, Ruiqun; Dong, Shun; Jin, Kunfeng; Zhang, Xinghong

doi:10.1016/j.ceramint.2015.11.027

Cited by 33 publications

(22 citation statements)

References 40 publications

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“…SiC and SiO x clusters are the bases for the growth of SiO x -coated SiC nanowires. [29][30][31][32][33][34][35] C. Thermodynamics and Equilibrium Calculations…”

Section: Reaction Between Si and Flowing Co(g)mentioning

confidence: 99%

Characterization of a Si-SiO2 Mixture Generated from SiO(g) and CO(g)

Broggi

Tangstad

Ringdalen

2019

Metall Mater Trans B

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The reaction between SiO(g) and CO(g) is a relevant intermediate reaction in the silicon production process. One of the products generated from this gas mixture is called by its color, brown condensate. In this paper, SiO(g) and CO(g) are produced from SiO2-SiC pellets. The reaction between the two gases occurred on SiC particles. Inert gas was injected at different flows. The SiC particles were collected, and the brown condensate deposited on them was characterized by electron probe microanalysis, X-ray photoelectron spectroscopy, and focused ion beam preparation samples for transmission electron microscope analysis. The brown condensate consists of a mixture of Si spheres embedded in a SiO2 matrix. The compound generates in the temperature range from 1400 °C to 1780 °C (1673 K to 2053 K), and in the SiO(g) partial pressure range between 0.534 and 0.742, depending on the inert gas flow. SiC crystallites are located at the Si-SiO2 interface. Carbides are believed to generate from the reaction between liquid silicon and CO(g). Carbides may also precipitate from reaction between dissolved carbon and liquid silicon, but to a minor extent. Both mechanisms are believed to happen above the melting point of silicon and in the softening range of silica.

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“…SiC and SiO x clusters are the bases for the growth of SiO x -coated SiC nanowires. [29][30][31][32][33][34][35] C. Thermodynamics and Equilibrium Calculations…”

Section: Reaction Between Si and Flowing Co(g)mentioning

confidence: 99%

Characterization of a Si-SiO2 Mixture Generated from SiO(g) and CO(g)

Broggi

Tangstad

Ringdalen

2019

Metall Mater Trans B

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“…Recently, some novel manufactured techniques of SiC nanostructure were developed. Some reports were brought forward for synthesis of SiC nanowires (SiC nw ) [5][6][7][8][9][10], including arc discharge, laser ablation, and carbon thermal reduction. However, expensive manufacturing cost and inferior dispersion uniformity of reinforcement were obvious.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of SiC Composites with Synergistic Toughening of Carbon Whisker andIn Situ3C-SiC Nanowire

Zhang

2016

Advances in Materials Science and Engineering

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The SiC composites with synergistic toughening of carbon whisker andin situ3C-SiC nanowire have been fabricated by hot press sinter technology and annealed treatment technology. Effect of annealed time on the morphology of SiC nanowires and mechanical properties of theCw/SiC composites was surveyed in detail. The appropriate annealed time improved mechanical properties of theCw/SiC composites. The synergistic effect of carbon whisker and SiC nanowire can improve the fracture toughness forCw/SiC composites. The vapor-liquid-solid growth (VLS) mechanism was proposed. TEM photo showed that 3C-SiC nanowire can be obtained with preferential growth plane ({111}), which corresponded to interplanar spacing about 0.25 nm.

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“…Most of the studies are performed at atmospheric pressure, utilizing a simple production method. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] The procedure is always based on the same principle. A mixture of raw materials (Si or SiO 2 , C or SiC, Ar) is heated, until it produces a gas phase, consisting mainly of SiO(g) and CO(g).…”

Section: Introductionmentioning

confidence: 99%

“…The most common are vapor-solid growth, vapor-liquid-solid growth [22,23] and oxide-assisted growth (OAG). [11,12,24,25] The OAG mechanism explains the formation of the core-shell nanowires, with oxides on the shell phase. The partial pressure of SiO(g) in the gas phase (p SiO ) is believed to be the driving force for Reaction (1), which undergoes out of equilibrium conditions.…”

Section: Introductionmentioning

confidence: 99%

Characterization, Thermodynamics and Mechanism of Formation of SiC-SiOx Core–Shell Nanowires

Broggi

Ringdalen

Tangstad

2020

Metall Mater Trans B

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Silicon carbide nanowires are valuable for electronic and optical applications, due to their high mechanical and electrical properties. Previous studies demonstrated that nanowires can be produced easily, by mixing a silicon-based compound (Si or SiO2) with a carbon source (C or SiC), in an inert gas atmosphere (Ar or He). The result of this reaction is an elevated number of core–shell SiC-SiOx nanowires. The mechanism of formation of these wires should be inquired, in order to control the process. In this work, SiO2 and SiC are chosen as raw materials for SiO(g) and CO(g) production. These two gases react at SiC surfaces and generate the core–shell nanowires. SEM, TEM and XPS analyses confirm the composition and the microstructure of the product. A three-step mechanism of formation is proposed. The formation of nanowires is compared with thermodynamics of reactions occurring in the Si-C-O system. It is found that nanowires develop in wide temperature and SiO partial pressure ranges (T: 924 °C to 1750 °C, pSiO = 0.50 to 0.74). Higher He flows will shift the reaction to lower temperatures and pSiO.

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Several millimeters long SiC–SiOx nanowires synthesized by carbon black and silica sol

Cited by 33 publications

References 40 publications

Characterization of a Si-SiO2 Mixture Generated from SiO(g) and CO(g)

Characterization of a Si-SiO2 Mixture Generated from SiO(g) and CO(g)

Fabrication of SiC Composites with Synergistic Toughening of Carbon Whisker andIn Situ3C-SiC Nanowire

Characterization, Thermodynamics and Mechanism of Formation of SiC-SiOx Core–Shell Nanowires

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