Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing

Sudoh, Koichi; Hiruta, Reiko; Kuribayashi, Hitoshi

doi:10.1063/1.4829912

Cited by 13 publications

(12 citation statements)

References 31 publications

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“…The present authors have used the tangential degrees of freedom to improve the mesh quality during the evolution of discretized curvature flows, see [2,3,4,5]. There has been interest in numerical schemes for axisymmetric schemes for geometric evolution equations both for second and for fourth order flows, see [41,40,14,19,20,23,25,44,47]. However, the literature on numerical analysis of such schemes is sparse.…”

Section: Introductionmentioning

confidence: 99%

Finite element methods for fourth order axisymmetric geometric evolution equations

Barrett

Garcke

Nürnberg

2019

Journal of Computational Physics

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Fourth order curvature driven interface evolution equations frequently appear in the natural sciences. Often axisymmetric geometries are of interest, and in this situation numerical computations are much more efficient. We will introduce and analyze several new finite element schemes for fourth order geometric evolution equations in an axisymmetric setting, and for selected schemes we will show existence, uniqueness and stability results. The presented schemes have very good mesh and stability properties, as will be demonstrated by several numerical examples.

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Section: Introductionmentioning

confidence: 99%

Finite element methods for fourth order axisymmetric geometric evolution equations

Barrett

Garcke

Nürnberg

2019

Journal of Computational Physics

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“…As illustrated in Figures f and g, Si NPs can be transformed into two types of SON structures, depending on the AR of the initial Si NPs. − For instance, Sato et al demonstrated that when the AR of initial Si NPs is larger than 3, Si NPs reorganize to a Si film on spherical-shaped voids upon annealing (Figure f). If the initial pores have an AR < 3, the surface is simply flattened by surface diffusion.…”

Section: Resultsmentioning

confidence: 99%

A Semitransparent and Flexible Single Crystal Si Thin Film: Silicon on Nothing (SON) Revisited

Park

Lee

et al. 2016

ACS Appl. Mater. Interfaces

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Ultrathin single crystal Si films offer a versatile vehicle for high performance flexible and semitransparent electric devices due to their outstanding optoelectric and mechanical properties. Here, we demonstrate the formation of an ultrathin (100) single crystal Si film based on morphological evolution of nanoporous Si during high temperature annealing. Square arrays of cylindrical Si pores are formed by nanoimprint lithography and deep reactive etching and then subjected to annealing in hydrogen ambient. By controlling the aspect ratio of nanoporous Si, defect-free single crystal Si membranes with controlled thicknesses from 330 to 470 nm are formed on a platelike void after the annealing. In addition, we investigate the role of oxygen impurities in a hydrogen atmosphere on defect formation on a Si surface and eliminate the oxygen-related defects on Si by controlling gas phase diffusion of oxygen impurities during annealing in a conventional tube furnace. Finally, we demonstrate the transfer of a defect-free, flexible, and wafer scale Si membrane with thickness of 470 nm onto a PDMS substrate, utilizing the platelike void under the membrane as a releaser. The ultrathin flexible Si film on PDMS shows optical transmittance of about 30-70% in visible and near-infrared light.

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“…Fatigue in Si attracts much attention in the MEMS community because many of Si MEMS mechanical elements are subjected to cyclic stressing [36][37][38][39][76][77][78][79][80][81][82][83][84]. Kamiya et al [78] did a Round Robin test to examine the S-N curve for Si.…”

Section: Siliconmentioning

confidence: 99%

“…Fatigue in Si attracts much attention in the MEMS community because many of Si MEMS mechanical elements are subjected to cyclic stressing [36–39,76–84]. Kamiya et al .…”

Section: Materials Characteristicsmentioning

confidence: 99%

Mechanical Property Measurement of Micro/Nanoscale Materials for MEMS: A Review

Namazu

2022

IEEJ Transactions Elec Engng

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By virtue of a great progress of semiconductor fabrication technologies, micro electro‐mechanical systems (MEMS) have been developed for a wide variety of industries. For reliability of MEMS, micromaterials in MEMS need to be examined experimentally, and the obtained results need to be reflected in the design of MEMS. In addition, with the benefit of such the MEMS technology, nowadays mechanical characteristics of nanomaterials have been evaluated precisely. Nanoscale mechanical testing provides an opportunity to find new unique physical phenomena, such as plastic deformation in Si at intermediate temperatures. In this review paper, mechanical testing technologies developed for investigating micro and nanoscale materials are reviewed. Then, mechanical characteristics of Si and other materials evaluated using the micro and nano mechanical testing technologies are introduced. © 2022 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

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Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing

Cited by 13 publications

References 31 publications

Finite element methods for fourth order axisymmetric geometric evolution equations

Finite element methods for fourth order axisymmetric geometric evolution equations

A Semitransparent and Flexible Single Crystal Si Thin Film: Silicon on Nothing (SON) Revisited

Mechanical Property Measurement of Micro/Nanoscale Materials for MEMS: A Review

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