Shell-doping of GaAs nanowires with Si for n-type conductivity

Dimakis, E.; Ramsteiner, M.; Tahraoui, A.; Riechert, H.; Geelhaar, Lutz

doi:10.1007/s12274-012-0263-9

Cited by 49 publications

(67 citation statements)

References 25 publications

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“…Then, the NWs show a strong tapering with a larger diameter d cs at the top than at the bottom d c (see Fig. 22 Similar to the results shown here, higher temperatures resulted in tapered shells. EDX profiles acquired at different positions along the NW axis are plotted in Fig.…”

Section: Resultssupporting

confidence: 80%

Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

2015

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In this report, we present the growth and structural analyses of broken gap InAs/GaSb core-shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the shell growth temperature, two distinct growth regimes for the GaSb shells are identified resulting in conformal or tapered shells. Morphological analyses reveal a dodecagonal nanowire cross-section after GaSb shell growth. Detailed transmission electron microscope investigations from different zone axes confirm that the small lattice mismatch of 0.6% allows the deposition of 40 nm thick GaSb shells free of misfit dislocations. Additionally, an abrupt interface from InAs to GaSb is found. These nanowires are suitable for future devices such as TFETs.

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Section: Resultssupporting

confidence: 80%

Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

2015

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“…For InAs nanowires grown by metal-organic vapour phase epitaxy, the addition of Si was found to reduce the diffusion length of In on the NW sidewalls, leading to a reduced vertical growth rate of the NWs (Wirths et al, 2011). The same influence of Si was observed regarding the Ga diffusion length on the sidewalls of MBE-grown GaAs NWs (Dimakis et al, 2012). In a qualitatively similar way, our findings can be explained assuming that the diffusion length of group III atoms on the oxide layer decreases with increasing Si concentration.…”

Section: Discussionsupporting

confidence: 86%

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Davydok¹,

Rieger²,

Biermanns³

et al. 2013

J Appl Cryst

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Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga 0.2 In 0.8 As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

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“…For the present study, the LED multishell structure grown around an approximately 100 nm thick Be doped p-type GaAs NW core consists of a 10 nm thick undoped GaAs shell, a coaxial DWELL heterostructure, a 10 nm thick undoped GaAs shell, and an outer 50 nm thick n-type GaAs shell, which was doped with Si in an approach established previously. 29 The schematic cross section of the LED structure is shown as an inset in Figure 5b. The total diameter of the LED NWs is approximately 260 nm.…”

Section: Resultsmentioning

confidence: 99%

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Herranz

Corfdir

Luna

et al. 2019

ACS Appl. Nano Mater.

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Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter-and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 µm in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 µm.

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Shell-doping of GaAs nanowires with Si for n-type conductivity

Cited by 49 publications

References 25 publications

Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

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