2008
DOI: 10.1088/1468-6996/9/4/045001
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Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2films subjected to rapid thermal annealing

Abstract: We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3 × 10 16 cm −2shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150• C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

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Cited by 4 publications
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