Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

Abstract

Exact quantum reaction probabilities for a collinear model of the F + HH, HD, D D and DH reactions on the MV potential energy surface have been computed using hyperspherical coordinates. The results, obtained up to a total energy of 1.8 eV, show three main features: (i) resonances, whose positions and widths are analysed simply in the hyperspherical formalism; (ii) a slowly varying background increasing for FHD, decreasing for FDH, and oscillating for FHH and FDD, whose variations are interpreted by classical dynamics; (iii) partial reaction probabilities revealing decreasing vibrational adiabaticity in the order FHH-FDD-FHD-FDH.

Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm

“…To solve the tradeoffs, we have proposed variable-γ FD SOI MOSFETs [8], where thin (around 10 nm) BOX is used and γ is varied by altering the substrate condition into depletion and inversion. We have demonstrated its advantages, such as excellent I on -I off characteristics in long channel and delay characteristics in short channel, using device simulations [8][9][10]. However, the experimental validations of short channel behavior and their circuit performance have not been performed yet.…”