Short pulse generation using multisegment mode-locked semiconductor lasers

Derickson, Dennis; Helkey, Roger; Már, A.; Karin, J.R.; Wasserbauer, J.; Bowers, John E.

doi:10.1109/3.159527

Cited by 259 publications

(92 citation statements)

References 38 publications

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“…For a very short SA (less than a few wavelengths), coherent effects need to be taken into account. However for MLLs with ridge waveguides, the coherent effects are small in the SA (Derickson et al 1992) and therefore have not been implemented in the model. The isolation sections between an amplifier and a SA are considered as non-reversely biased SAs with a fixed carrier lifetime of 200 ps and no current injection.…”

Section: The Integrated Mll Modelmentioning

confidence: 99%

“…absorber (SA) (Derickson et al 1992). An important advantage of semiconductor devices is not so much that they can be more robust and smaller than solid-state laser sources, but that such lasers can be more easily mass-produced and integrated on a single chip with other optical devices such as optical switches, filters and amplifiers using active-passive integration technology.…”

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confidence: 99%

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Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers

et al. 2008

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In this paper a model and simulation results of integrated semiconductor passively modelocked ring lasers are presented. The model includes nonlinear effects such as two-photon absorption and a non-linear refractive index, a logarithmic gain-carrier relation, and concentration dependent radiative and non-radiative carrier recombination rates. The optical bandwidth of the system is controlled by a digital filter. The model has been used to simulate two geometries of ring modelocked lasers. The first is a symmetric design, where the two counter propagating pulses in the cavity experience the same amplification and absorption. The second is an asymmetric design where the differences for the two directions of pulse propagation are maximised. Simulation results show that a symmetrical cavity shows a several times wider window for its operating parameters for stable modelocking.

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Section: The Integrated Mll Modelmentioning

confidence: 99%

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confidence: 99%

Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers

et al. 2008

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“…This resulted in different carrier concentrations for the p-type samples with an initial free carrier concentration of 3 ϫ10 16 , 1.2ϫ10 17 , and 1.9ϫ10 17 cm Ϫ3 for Al 0.3 Ga 0.7 As, Al 0.6 Ga 0. 4 As, and AlAs, respectively. This is mainly due to strong Al-C bonding, leading to increased incorporation of C with higher Al content layers.…”

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confidence: 99%

“…3 There is much interest in multiple section lasers, which allow generation of picoseconds laser pulses. 4 For this purpose the carrier lifetime in the absorber section needs to be minimized. This could be achieved by introducing damage in the material, in order to create deep level centers and to decrease nonradiative lifetime.…”

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confidence: 99%

Electrical isolation of AlxGa1−xAs by ion irradiation

Lippen

Boudinov

Tan

et al. 2002

Applied Physics Letters

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The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa1−xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at ≈109 Ω/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of ≈600 °C is the upper limit for the n-type samples thermal stability.

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“…1,2 Several laboratories have demonstrated CPM laser operation [1][2][3][4] and system experiments 5 have shown the potential of the CPM laser as a pulse source for high-speed time-division multiplexed optical transmission systems. Despite this, the operation principles, in particular those determining the pulse width, have only received very modest attention.…”

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confidence: 99%