1970
DOI: 10.1109/tns.1970.4325778
|View full text |Cite
|
Sign up to set email alerts
|

Short-Term Anneal of 30-MeV Electron Damage in High-Purity n-Type Silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

1972
1972
2003
2003

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 7 publications
0
2
0
Order By: Relevance
“…Several material and device properties have been measured as a function of time in short-term annealing studies, including minority-carrier lifetime in bulk material [73], [74], [78], [81], [83], conductivity in bulk material [64], [78], diffusion length in solar cells [66]- [68], [75], [82], current gain in bipolar transistors [63], [65], [66], [68], [71], [79], [80], [82], [87], forward voltage drop in diodes [68], [72], junction capacitance in diodes [70], propagation delay time in logic circuits [69], circuit gain in power inverter circuits [69], and dark current [84], [85] and charge transfer inefficiency [85] in CCDs. Various pulsed radiation sources that provided several types of particles were used in those short-term annealing studies, including fission neutrons [63]- [71], [73], [79], [80], [82]- [85], 14-MeV neutrons [73], [82], [83], 1.4-MeV electrons [66], [68], [74], 10-MeV electrons [72], and 30-MeV electrons [78]. In addition t...…”
Section: B Short-term Annealingmentioning
confidence: 99%
“…Several material and device properties have been measured as a function of time in short-term annealing studies, including minority-carrier lifetime in bulk material [73], [74], [78], [81], [83], conductivity in bulk material [64], [78], diffusion length in solar cells [66]- [68], [75], [82], current gain in bipolar transistors [63], [65], [66], [68], [71], [79], [80], [82], [87], forward voltage drop in diodes [68], [72], junction capacitance in diodes [70], propagation delay time in logic circuits [69], circuit gain in power inverter circuits [69], and dark current [84], [85] and charge transfer inefficiency [85] in CCDs. Various pulsed radiation sources that provided several types of particles were used in those short-term annealing studies, including fission neutrons [63]- [71], [73], [79], [80], [82]- [85], 14-MeV neutrons [73], [82], [83], 1.4-MeV electrons [66], [68], [74], 10-MeV electrons [72], and 30-MeV electrons [78]. In addition t...…”
Section: B Short-term Annealingmentioning
confidence: 99%
“…The subject of point defects under extrinsic doping conditions is discussed below after first summarizing the experimental data of point-defect energy levels in silicon. (Mallon and Naber, 1970;Naber, Mallon, and Leadon, 1972) is a negatively charged self-interstitial, and may be the same defect giving rise to the Si-625 EPR spectrum (Watkins, 1975). However, in a subsequent work aimed at gathering more information about the "elusive" self-'interstitial, Harris and Watkins (1985) have presented experimental evidence that the Si-625 defect is not an isolated self-interstitial.…”
Section: At High Temperaturementioning
confidence: 99%