Short-wavelength ultraviolet dosimeters based on DNA nanostructure-modified graphene field-effect transistors

Ai, Zhaolin; Wang, Liqian; Guo, Qianying; Kong, Dewen; Wu, Yungen; Liu, Yunqi; Wei, Dacheng

doi:10.1039/d1cc01851e

Cited by 9 publications

(10 citation statements)

References 38 publications

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“…However, high temperatures are not suitable for the attachment of aptamers due to degradation of biomolecules. On the other hand, the UV degradation rate of DNA is a function of irradiation wavelength, with the observed degradation even at a dose of 0.1 kJ/m 2 at 254 nm irradiation, while staying stable at a dose of 120 kJ/m 2 in the case of irradiation at 365 nm UV [ 23 ]. Recent results showed that the irradiation of aptamers with 266 nm UV causes lesions with a relatively low damage rate, with a decay constant of about 0.4–0.8 h −1 , for an exposure rate at 2 mJ cm −2 s −1 [ 24 ].…”

Section: Resultsmentioning

confidence: 99%

One-Step Photochemical Immobilization of Aptamer on Graphene for Label-Free Detection of NT-proBNP

et al. 2022

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A novel photochemical technological route for one-step functionalization of a graphene surface with an azide-modified DNA aptamer for biomarkers is developed. The methodology is demonstrated for the functionalization of a DNA aptamer for an N-terminal B-type natriuretic peptide (NT-proBNP) heart failure biomarker on the surface of a graphene channel within a system based on a liquid-gated graphene field effect transistor (GFET). The limit of detection (LOD) of the aptamer-functionalized sensor is 0.01 pg/mL with short response time (75 s) for clinically relevant concentrations of the cardiac biomarker, which could be of relevance for point-of-care (POC) applications. The novel methodology could be applicable for the development of different graphene-based biosensors for fast, stable, real-time, and highly sensitive detection of disease markers.

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Section: Resultsmentioning

confidence: 99%

One-Step Photochemical Immobilization of Aptamer on Graphene for Label-Free Detection of NT-proBNP

et al. 2022

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“…Sensing events and signal conversion normally occur at heterogeneous interfaces. ,, In the field of FETs, 2D materials restrain charge flow solely on the surface, which directly exposes it to the environment and is entirely located at the interfaces of signal acquisition and conversion, leading to rapid and sensitive response upon exposure to the outer stimuli. ,, In detail, the advantages of 2D FET sensors are attributed to at least three aspects: (i) The free dangling bonds enable 2D materials to construct functional heterostructures with ideal vdW interfaces readily. − It reduces the scattering center, which is key to maintain their attractive electronic properties (e.g., high carrier mobility) even after different device fabrication and modification processes . (ii) The atomic thickness ensures direct exposure of the channel to functional interfaces and/or external environments, leading to a rapid response to foreign stimuli with ultrahigh sensitivity. − (iii) The large surface-to-volume ratio provides abundant modification sites for anchoring specific receptors, which ensures the sensitivity and specificity upon specific perturbations. − This section clarifies the motivation of using 2D materials, the concepts, and the fundamentals of the 2D FET sensors.…”

Section: Fundamentals and Motivationmentioning

confidence: 99%

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

2022

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The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

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Section: Sensing Mechanisms In Detecting Biomoleculesmentioning

confidence: 99%

Review on two-dimensional material-based field-effect transistor biosensors: accomplishments, mechanisms, and perspectives

et al. 2023

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Field-effect transistor (FET) is regarded as the most promising candidate for the next-generation biosensor, benefiting from the advantages of label-free, easy operation, low cost, easy integration, and direct detection of biomarkers in liquid environments. With the burgeoning advances in nanotechnology and biotechnology, researchers are trying to improve the sensitivity of FET biosensors and broaden their application scenarios from multiple strategies. In order to enable researchers to understand and apply FET biosensors deeply, focusing on the multidisciplinary technical details, the iteration and evolution of FET biosensors are reviewed from exploring the sensing mechanism in detecting biomolecules (research direction 1), the response signal type (research direction 2), the sensing performance optimization (research direction 3), and the integration strategy (research direction 4). Aiming at each research direction, forward perspectives and dialectical evaluations are summarized to enlighten rewarding investigations.

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Short-wavelength ultraviolet dosimeters based on DNA nanostructure-modified graphene field-effect transistors

Abstract: Direct and sensitive short-wavelength ultraviolet (UVC) dosimeters could enable safer disinfection environment against virus. We develop direct, quantitative, specific and highly sensitive UVC dosimeters based on DNA nanostructure-modified graphene field-effect...

Cited by 9 publications

References 38 publications

One-Step Photochemical Immobilization of Aptamer on Graphene for Label-Free Detection of NT-proBNP

One-Step Photochemical Immobilization of Aptamer on Graphene for Label-Free Detection of NT-proBNP

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

Review on two-dimensional material-based field-effect transistor biosensors: accomplishments, mechanisms, and perspectives

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