2010
DOI: 10.1117/1.3505831
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Shortened injector interband cascade lasers for 3.3- to 3.6-μm emission

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Cited by 36 publications
(13 citation statements)
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“…around typical values in the ICL devices. 26 The results are shown in Figures 4(a)-(c). The mixing between H1 and H2 is affected in the presence of the electric field but it still remains strong.…”
mentioning
confidence: 81%
“…around typical values in the ICL devices. 26 The results are shown in Figures 4(a)-(c). The mixing between H1 and H2 is affected in the presence of the electric field but it still remains strong.…”
mentioning
confidence: 81%
“…It was showed with calculations and experimental results that the optical mode intensity in the active region could be increased in the shortened injector IC laser to improve the device performance. 49 This group has worked on Sb-based type-I QW lasers for many years and recently began efforts in the development of IC lasers on n -type GaSb substrates using an Eiko EV100S solid source MBE chamber. The group reported their initial work in IC lasers in 2009.…”
Section: Ic Lasers With Gasb Separate Confi Nement Layersmentioning
confidence: 99%
“…The QCL is based on strain-compensated InGaAs/InAlAs-AlAs material system on InP, which has the advantage of a more mature InP substrate and no Sb-containing alloys compared to other 3.3 μm quantum cascade [9,10], interband cascade [11,12], and type-I diode lasers [13] reported up to now. It is thermoelectrically stabilized at 300 K and operates in a pulsed mode, with a pulse width of 100 ns and 20 kHz repetition rate.…”
Section: B Selection Of the Laser Sourcementioning
confidence: 99%