Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process

Abstract

The authors report silicon avalanche photodetectors ͑APDs͒ fabricated with 0.18 m standard complementary metal-oxide-semiconductor ͑CMOS͒ process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD ͑CMOS-APD͒ exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.

7-Gb/s monolithic photoreceiver fabricated with 0.25-.MU.m SiGe BiCMOS technology

“…We have reported Si avalanche photodetectors (Si APDs) having large bandwidth [6], and a photoreceiver having monolithically integrated Si APD and pre-amplifier with standard complementary metal-oxide-semiconductor (CMOS) technology [7]. In this letter, we present the results of our works extended to SiGe bipolar CMOS (BiCMOS) technology.…”

“…It has 30 µm × 30 µm of active area for optical window and multi-finger electrodes. Detailed structure and characteristics of Si APD can be found in [6]. A dummy Si APD is used to provide identical capacitance to differential TIA inputs.…”

“…The Si APD is realized by vertical P + source/drain and N-well junction in CMOS process because this is less influenced by slow diffusion currents in the substrate region [6] and, with the shallow trench isolation, this junction does not suffer from the premature edge breakdown. It has 30 µm × 30 µm of active area for optical window and multi-finger electrodes.…”

A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector

“…It is also possible to realize 850-nm silicon photodetectors without any process modification from the conventional silicon processing technology. We have previously reported various types of siliconbased avalanche photodetectors (Si APDs) which provide high responsivity and large bandwidth [2,3]. In addition, we have demonstrated a monolithically integrated optical receiver having a Si APD fabricated with standard silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor (BiCMOS) technology [4].…”

Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology

“…Additional lowdoped layers or silicon-on-insulator technique have been considered [2,3], but these require additional fabrication costs. As an attempt for realizing high-speed and highresponsivity photodetectors with standard CMOS technology without any process modification, we have investigated CMOS-compatible avalanche photodetectors (CMOS-APDs) based on P + /N-well and N + /P-well junctions [4,5].…”